AM29F080B-75FF datasheet, PDF - EEWORLD Datasheet

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AM29F080B-75FF: DescriptionFlash, 1MX8, 70ns, PDSO40, REVERSE, MO-142CD, TSOP-40; Categorystorage storage; File Size829KB，38 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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AM29F080B-75FF Overview

Flash, 1MX8, 70ns, PDSO40, REVERSE, MO-142CD, TSOP-40

AM29F080B-75FF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SPANSION
Parts packaging code	TSOP1
package instruction	TSOP1-R,
Contacts	40
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	70 ns
Other features	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION
Data retention time - minimum	20
JESD-30 code	R-PDSO-G40
JESD-609 code	e3
length	18.4 mm
memory density	8388608 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	40
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	10 mm

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Am29F080B

8 Megabit (1 M x 8-Bit)

CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

5.0 V

10%, single power supply operation

— Minimizes system level power requirements

Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F080 device

High performance

— Access times as fast as 70 ns

Low power consumption

— 25 mA typical active read current

— 30 mA typical program/erase current

— 1 µA typical standby current (standard access

time to active mode)

Flexible sector architecture

— 16 uniform sectors of 64 Kbytes each

— Any combination of sectors can be erased.

— Supports full chip erase

— Group sector protection:

A hardware method of locking sector groups to

prevent any program or erase operations within

that sector group

Temporary Sector Group Unprotect allows code

changes in previously locked sectors

Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies bytes at specified addresses

Minimum 1,000,000 program/erase cycles per

sector guaranteed

20-year data retention at 125°C

— Reliable operation for the life of the system

Package options

— 40-pin TSOP

— 44-pin SO

Compatible with JEDEC standards

— Pinout and software compatible with

single-power-supply Flash standard

— Superior inadvertent write protection

Data# Polling and toggle bits

— Provides a software method of detecting program

or erase cycle completion

Ready/Busy# output (RY/BY#)

— Provides a hardware method for detecting

program or erase cycle completion

Erase Suspend/Erase Resume

— Suspends a sector erase operation to read data

from, or program data to, a non-erasing sector,

then resumes the erase operation

Hardware reset pin (RESET#)

— Resets internal state machine to the read mode

Command sequence optimized for mass storage

— Specific addresses not required for unlock cycles

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication#

21503

Rev:

Amendment/0

Issue Date:

December 4, 2000

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7

Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 8

Table 1. Am29F080B Device Bus Operations ..................................8

Table 5. Write Operation Status ..................................................... 20

Absolute Maximum Ratings . . . . . . . . . . . . . . . . 21

Figure 6. Maximum Negative Overshoot Waveform ...................... 21

Figure 7. Maximum Negative Overshoot Waveform ...................... 21

Requirements for Reading Array Data ..................................... 8

Writing Commands/Command Sequences .............................. 8

Program and Erase Operation Status ...................................... 8

Standby Mode .......................................................................... 9

RESET#: Hardware Reset Pin ................................................. 9

Output Disable Mode ................................................................ 9

Table 1. Am29F080B Sector Address Table ...................................10

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 21

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 22

TTL/NMOS Compatible .......................................................... 22

CMOS Compatible .................................................................. 22

Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 8. Test Setup ....................................................................... 23

Table 2. Test Specifications ........................................................... 23

Key to Switching Waveforms . . . . . . . . . . . . . . . 23

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 24

Read-only Operations ............................................................. 24

Figure 9. Read Operation Timings ................................................. 24

Autoselect Mode ..................................................................... 10

Table 2. Am29F080B Autoselect Codes (High Voltage Method) ....10

Hardware Reset (RESET#) .................................................... 25

Figure 10. RESET# Timings .......................................................... 25

Sector Group Protection/Unprotection .................................... 11

Table 3. Sector Group Addresses ...................................................11

Erase and Program Operations .............................................. 26

Figure 11. Program Operation Timings .......................................... 27

Figure 12. Chip/Sector Erase Operation Timings .......................... 28

Figure 13. Data# Polling Timings (During Embedded Algorithms) . 29

Figure 14. Toggle Bit Timings (During Embedded Algorithms) ...... 29

Figure 15. DQ2 vs. DQ6 ................................................................. 30

Temporary Sector Group Unprotect ....................................... 11

Figure 1. Temporary Sector Group Unprotect Operation ................11

Hardware Data Protection ...................................................... 12

Low V

Write Inhibit ......................................................................12

Write Pulse “Glitch” Protection ........................................................12

Logical Inhibit ..................................................................................12

Power-Up Write Inhibit ....................................................................12

Temporary Sector Unprotect .................................................. 30

Figure 16. Temporary Sector Group Unprotect Timing Diagram ... 30

Erase and Program Operations .............................................. 31

Alternate CE# Controlled Writes .................................................... 31

Figure 17. Alternate CE# Controlled Write Operation Timings ...... 32

Command Definitions . . . . . . . . . . . . . . . . . . . . . . 12

Reading Array Data ................................................................ 12

Reset Command ..................................................................... 12

Autoselect Command Sequence ............................................ 12

Byte Program Command Sequence ....................................... 13

Figure 2. Program Operation ..........................................................13

Chip Erase Command Sequence ........................................... 13

Sector Erase Command Sequence ........................................ 14

Erase Suspend/Erase Resume Commands ........................... 14

Figure 3. Erase Operation ...............................................................15

Command Definitions ............................................................. 16

Table 4. Am29F080B Command Definitions ..................................16

Write Operation Status . . . . . . . . . . . . . . . . . . . . . 17

DQ7: Data# Polling ................................................................. 17

Figure 4. Data# Polling Algorithm ...................................................17

RY/BY#: Ready/Busy# ........................................................... 18

DQ6: Toggle Bit I .................................................................... 18

DQ2: Toggle Bit II ................................................................... 18

Reading Toggle Bits DQ6/DQ2 .............................................. 18

DQ5: Exceeded Timing Limits ................................................ 19

DQ3: Sector Erase Timer ....................................................... 19

Figure 5. Toggle Bit Algorithm .........................................................19

Erase and Programming Performance . . . . . . 33

Latchup Characteristic . . . . . . . . . . . . . . . . . . . . 33

TSOP and SO Pin Capacitance . . . . . . . . . . . . . 33

Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 34

SO 044—44-Pin Small Outline Package ................................ 34

TS 040—40-Pin Standard Thin Small Outline Package ......... 35

TSR040—40-Pin Reverse Thin Small Outline Package ......... 36

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 37

Revision A (July 1997) ............................................................ 37

Revision B (January 1998) ..................................................... 37

Revision C (January 1998) ..................................................... 37

Revision D (May 1998) ........................................................... 37

Revision E (January 1999) ..................................................... 37

Revision E+1 (March 23, 1999) .............................................. 37

Revision E+2 (April 9, 1999) ................................................... 37

Revision F (November 15, 1999) ............................................ 37

Revision F+1 (May 18, 2000) ................................................. 37

Revision G (December 4, 2000) ............................................. 37

Am29F080B

AM29F080B-75FF Related Products

	AM29F080B-75FF	AM29F080B-75FI	AM29F080B-75FC	AM29F080B-75ED
Description	Flash, 1MX8, 70ns, PDSO40, REVERSE, MO-142CD, TSOP-40	Flash, 1MX8, 70ns, PDSO40, REVERSE, MO-142CD, TSOP-40	Flash, 1MX8, 70ns, PDSO40, REVERSE, MO-142CD, TSOP-40	Flash, 1MX8, 70ns, PDSO40, MO-142CD, TSOP-40
Is it Rohs certified?	conform to	incompatible	incompatible	conform to
Maker	SPANSION	SPANSION	SPANSION	SPANSION
Parts packaging code	TSOP1	TSOP1	TSOP1	TSOP1
package instruction	TSOP1-R,	TSOP1-R, TSSOP40,.8,20	TSOP1-R,	TSOP1,
Contacts	40	40	40	40
Reach Compliance Code	compliant	not_compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	70 ns	70 ns	70 ns	70 ns
Other features	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION	MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION
Data retention time - minimum	20	20	20	20
JESD-30 code	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40
JESD-609 code	e3	e0	e0	e3
length	18.4 mm	18.4 mm	18.4 mm	18.4 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	FLASH	FLASH	FLASH	FLASH
memory width	8	8	8	8
Number of functions	1	1	1	1
Number of terminals	40	40	40	40
word count	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C
organize	1MX8	1MX8	1MX8	1MX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1-R	TSOP1-R	TSOP1-R	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	240	240	260
Programming voltage	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	30	30	40
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
width	10 mm	10 mm	10 mm	10 mm
Humidity sensitivity level	-	3	3	3

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