TLP124
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP124
Programmable Controllers
AC / DC-Input Module
Solid-State Relays
Unit: mm
The TOSHIBA mini flat coupler TLP124 is a small outline coupler, suitable for
surface mount assembly.
TLP124 consists of a photo transistor optically coupled to a gallium arsenide
infrared emitting diode.
•
•
•
•
•
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 100% (min)
Rank BV: 200% (min)
Isolation voltage: 3750 Vrms (min)
UL recognized: UL1577, file No. E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
TOSHIBA
11-4C1
Weight: 0.09g (typ.)
Pin Configurations
(top view)
1
3
1 : Anode
3 : Cathode
4 : Emitter
6 : Collector
6
4
Start of commercial production
1988-04
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TLP124
Current Transfer Ratio
Current Transfer Ratio (min)
Classification
(Note 1)
Rank BV
Standard
Ta = 25°C
I
F
= 1 mA
V
CE
= 0.5 V
200%
100%
I
F
= 0.5 mA
V
CE
= 1.5 V
100%
50%
Ta =
-25
to 75°C
I
F
= 1 mA
V
CE
= 0.5 V
100%
50%
Marking of
Classification
BV
BV, Blank
Note 1: Ex, rank BV: TLP124(BV)
Note:
Application type name for certification test, please use standard product type name, i, e.
TLP124(BV): TLP124
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating
(Ta
≥
53°C)
Peak forward current
(100
μs
pulse, 100 pps)
Reverse voltage
Diode power dissipation
Diode power dissipation derating
(Ta
≥
53°C)
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Detector
Peak collector current
(10 ms pulse, 100 pps)
Power dissipation
Power dissipation derating
(Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating
(Ta
≥
25°C)
Isolation voltage
(AC, 60 s, R.H.
≤
60%)
(Note 1)
(10 s)
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
P
D
ΔP
D
/
°C
T
j
V
CEO
V
ECO
I
C
I
CP
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
Rating
50
-0.7
Unit
mA
mA/°C
1
5
100
-1.39
125
80
7
50
100
150
-1.5
125
-55 to 125
-55 to 100
260
200
-2.0
3750
A
V
mW
mW/°C
°C
V
V
mA
mA
mW
mW/°C
°C
°C
°C
°C
mW
mW/°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Device considered a two terminal device: Pins1, 3 shorted together and pins 4, 6 shorted together.
LED
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2017-04-26
TLP124
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min
―
―
―
-25
Typ.
5
1.6
1
―
Max
48
20
10
75
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse Current
Capacitance
Collector-emitter breakdown voltage
Detector
Emitter-collector breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
V
F
I
R
C
T
V
(BR)CEO
V
(BR)ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
Min
1.0
―
―
80
7
―
―
―
Typ.
1.15
―
30
―
―
10
2
12
Max
1.3
10
―
―
―
100
50
―
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= 1 mA, V
CE
= 0.5 V
Rank BV
I
F
= 0.5 mA, V
CE
= 1.5 V
Rank BV
I
C
= 0.5 mA, I
F
= 1 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 1 mA, I
F
= 1 mA
Rank BV
Off-state collector current
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
Min
100
200
50
100
―
―
―
―
Typ.
―
―
―
―
―
0.2
―
―
Max
1200
%
1200
―
―
0.4
―
0.4
10
μA
V
%
Unit
Current transfer ratio
I
C
/I
F
Low input CTR
I
C
/I
F(low)
Coupled Electrical Characteristics
(Ta =
-
25 to 75°C)
Characteristic
Symbol
Test Condition
I
F
= 1 mA, V
CE
= 0.5 V
Rank BV
I
F
= 0.5 mA, V
CE
= 1.5 V
Rank BV
Min
50
100
―
―
Typ.
―
―
50
100
Max
―
―
―
―
Unit
%
%
%
%
Current transfer ratio
I
C
/I
F
Low input CTR
I
C
/I
F(low)
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2017-04-26
TLP124
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 60 s
Isolation voltage
BV
S
AC, 1 s, in oil
DC, 60 s, in oil
Min
―
5×10
10
3750
―
―
Typ.
0.8
10
14
—
10000
10000
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
V
dc
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
ON
t
OFF
t
ON
t
s
t
OFF
R
L
= 4.7 kΩ
V
CC
= 5 V, I
F
= 1.6 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
8
8
10
8
10
50
300
Max
―
―
―
―
―
―
―
μs
μs
Unit
Fig. 1 Switching time test circuit
I
F
R
L
V
CE
V
CE
V
CC
I
F
t
s
V
CC
4.5V
0.5V
t
OFF
t
ON
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2017-04-26
TLP124
I
F
– Ta
100
200
P
C
– Ta
Allowable forward current
I
F
(mA)
Allowable collector power
dissipation P
C
(mW)
80
160
60
120
40
80
20
40
0
-20
0
20
40
60
80
100
120
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
I
FP (mA)
3000
Pulse width
≤
100μs
Ta = 25°C
100
Ta = 25°C
50
I
F
– V
F
I
F
(mA)
Forward current
10-3
10-2
10-1
100
1000
500
30
Pulse forward current
300
10
5
3
100
50
30
1
0.5
0.3
10
Duty cycle ratio D
R
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage V
F
(V)
∆V
F
/
∆Ta
– I
F
Forward voltage temperature
coefficient
∆V
F
/
∆Ta
(mV / °C)
-3.2
1000
I
FP
– V
FP
(mA)
I
FP
Pulse forward current
500
300
-2.8
-2.4
-2.0
-1.6
100
50
30
10
5
3
Pulse width
≤
10μs
Repetitive
Frequency = 100Hz
1
0.6
Ta = 25°C
1.0
1.4
1.8
2.2
2.6
3.0
-1.2
-0.8
-0.4
0.1
0.3 0.5
1
3
5
10
30
50
Forward current
I
F
(mA)
Pulse forward voltage V
FP
(V)
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