TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.2 A |
| Collector-based maximum capacity | 4.5 pF |
| Collector-emitter maximum voltage | 40 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 250 MHz |
| Maximum off time (toff) | 300 ns |
| Maximum opening time (tons) | 70 ns |
| VCEsat-Max | 0.4 V |
| BSR18AR-TAPE-7 | BSR18A-TAPE-7 | BSR18AR | BSR18A-TAPE-13 | BSR18AR-TAPE-13 | |
|---|---|---|---|---|---|
| Description | TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR | TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR | TRANSISTOR 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal |
| Maker | NXP | NXP | NXP | NXP | NXP |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| Collector-based maximum capacity | 4.5 pF | 4.5 pF | 4.5 pF | 4.5 pF | 4.5 pF |
| Collector-emitter maximum voltage | 40 V | 40 V | 40 V | 40 V | 40 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 30 | 30 | 30 | 30 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| Maximum off time (toff) | 300 ns | 300 ns | 300 ns | 300 ns | 300 ns |
| Maximum opening time (tons) | 70 ns | 70 ns | 70 ns | 70 ns | 70 ns |
| VCEsat-Max | 0.4 V | 0.4 V | 0.4 V | 0.4 V | 0.4 V |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 |
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