BFQ64 datasheet, PDF - EEWORLD Datasheet

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BFQ64: DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-243; CategoryDiscrete semiconductor The transistor; File Size51KB，1 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFQ64 Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-243

BFQ64 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-243
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3000 MHz

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BFQ64 Related Products

	BFQ64	BF989	BF993
Description	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-243	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	SIEMENS	SIEMENS	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PSSO-F3	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	1 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	GULL WING	GULL WING
Terminal location	SINGLE	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON
transistor applications	AMPLIFIER	AMPLIFIER	-
Minimum drain-source breakdown voltage	-	20 V	20 V
Maximum drain current (Abs) (ID)	-	0.03 A	0.05 A
Maximum drain current (ID)	-	0.03 A	0.05 A
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	-	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE

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