BC848W-A datasheet, PDF - EEWORLD Datasheet

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BC848W-A: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size352KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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BC848W-A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN

BC848W-A Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

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SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION .

BC846W/7W/8W

EPITAXIAL PLANAR NPN TRANSISTOR

E

M

B

M

FEATURES

・High

Voltage : BC846W V

CEO

=65V.

・For

Complementary With PNP Type BC856W/857W/858W.

P

2

A

J

G

D

1

3

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

BC846W

Collector-Base Voltage

BC847W

BC848W

BC846W

Collector-Emitter

Voltage

BC847W

BC848W

BC846W

Emitter-Base Voltage

BC847W

BC848W

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

I

C

I

E

P

C

T

j

T

stg

V

EBO

V

CEO

V

CBO

SYMBOL

RATING

80

50

30

65

45

30

6

5

100

-100

100

150

-55½150

mA

V

UNIT

H

N

K

N

DIM

A

B

C

D

E

G

H

J

K

L

M

N

P

MILLIMETERS

_

2.00 + 0.20

_ 0.15

1.25 +

_

0.90 + 0.10

0.3+0.10/-0.05

_

2.10 + 0.20

0.65

0.15+0.1/-0.06

1.30

0.00~0.10

0.70

_

0.42 + 0.10

0.10 MIN

0.1 MAX

C

L

1. EMITTER

2. BASE

3. COLLECTOR

USM

Marking

Lot No.

mA

mW

℃

Type Name

MARK SPEC

TYPE

MARK

BC846W-A

1A

BC846W-B

1B

BC847W-A

1E

BC847W-B

1F

BC847W-C

1G

BC848W-A

1J

BC848W-B

1K

BC848W-C

1L

2008. 8. 29

Revision No : 4

1/3

BC848W-A Related Products

	BC848W-A	BC847W-C	BC848W-B	BC847W-A	BC847W-B	BC848W-C
Description	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, USM, 3 PIN
Maker	KEC	KEC	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	45 V	30 V	45 V	45 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	420	200	110	200	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz

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