K4Q160411C-BL500 datasheet, PDF

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K4Q160411C-BL500: DescriptionEDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28; Categorystorage storage; File Size401KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4Q160411C-BL500 Overview

EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

K4Q160411C-BL500 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	SOJ
package instruction	SOJ,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 code	R-PDSO-J28
length	18.42 mm
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	28
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX4
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
Maximum seat height	3.76 mm
self refresh	YES
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.62 mm

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K4Q170411C, K4Q160411C

CMOS DRAM

4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out

DESCRIPTION

This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high

speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle (2K Ref. or 4K Ref.), access

time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of

this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is avail-

able in L-version. Four separate CAS pins provide for seperate I/O operation allowing this device to operate in parity mode.

This 4Mx4 Extended Data Out Quad CAS DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-

width, low power consumption and high reliability.

FEATURES

•

Part Identification

- K4Q170411C-B(F) (5V, 4K Ref.)

- K4Q160411C-B(F) (5V, 2K Ref.)

• Extended Data Out mode operation

(Fast Page Mode with Extended Data Out)

• Four separate CAS pins provide for separate I/O operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

Unit : mW

• TTL compatible inputs and outputs

• Early Write or output enable controlled write

605

550

• JEDEC Standard pinout

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply

•

Active Power Dissipation

Refresh Cycle

-50

-60

495

440

Speed

FUNCTIONAL BLOCK DIAGRAM

•

Refresh Cycles

Part

NO.

K4Q170411C

K4Q160411C

Refresh

cycle

Refresh period

Normal

64ms

32ms

Refresh Timer

Refresh Control

Row Decoder

Sense Amps & I/O

RAS

CAS0 - 3

Control

Clocks

Vcc

Vss

L-ver

128ms

VBB Generator

Data in

Buffer

•

Performance Range

Speed

-50

-60

Refresh Counter

Memory Array

4,194,304 x 4

Cells

DQ0

DQ3

RAC

50ns

60ns

CAC

13ns

15ns

84ns

104ns

HPC

20ns

25ns

A0-A11

(A0 - A10)

A0 - A9

(A0 - A10)

Row Address Buffer

Col. Address Buffer

Column Decoder

Data out

Buffer

Note)

: 2K Refresh

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to

change products and specifications without notice.

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