datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > storage> storage> 89LV1632RPQI-30
PDF
Preview

89LV1632RPQI-30

Description
SRAM Module, 512KX32, 30ns, CMOS, CQFP68, QFP-68
Categorystorage    storage   
File Size252KB，12 Pages
ManufacturerData Device Corporation
Download Datasheet Parametric Compare View All

89LV1632RPQI-30 Overview

SRAM Module, 512KX32, 30ns, CMOS, CQFP68, QFP-68

89LV1632RPQI-30 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerData Device Corporation
package instructionQFP,
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time30 ns
JESD-30 codeS-CQFP-G68
length37.9476 mm
memory density16777216 bit
Memory IC TypeSRAM MODULE
memory width32
Number of functions1
Number of terminals68
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX32
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQFP
Package shapeSQUARE
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height6.1976 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationQUAD
width37.9476 mm

89LV1632RPQI-30 Preview

16 Megabit (512K x 32-Bit)
Low Voltage MCM SRAM
16 Megabit (512k x 32-bit) SRAM MCM
CS 1-4
Address
89LV1632
OE, WE
Power
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Ground
89LV1632
MCM
Memory
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Logic Diagram
F
EATURES
:
• Four 512k x 8 SRAM die
• R
AD
-P
AK
® Technology radiation-hardend against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 68 MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 6E-9 cm
2
/bit
• Package: 68-pin quad flat package
• Completely static memory - no clock or timing strobe
required
• Fast Access Time:
• -20, 25, 30 ns Access Times
• Internal bypass capacitor
• High-speed silicon-gate CMOS Technology
• 3.3 V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static Random Access Memory
features a greater than 100 krad(Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramic package. With high-perfor-
mance silicon-gate CMOS technology, the 89LV1632 reduces
power consumption and eliminates the need for external
clocks or timing strobes. It is equipped with output enable
(OE) and four byte chip enables (CS1 - CS4) inputs to allow
greater system flexibility. When OE input is high, the output is
forced to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age.It eliminates the need for box shielding while providing the
required radiation shielding for a lifetime in orbit or a space
mission. In a GEO orbit, R
AD
-P
AK
® packaging provides greater
than 100 krad(Si) total radiation dose tolerance. This product
is available with screening up to Maxwell Technologies self-
defined Class K.
11.02.15 Rev 5
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
1. P
INOUT
D
ESCRIPTION
P
IN
34-28, 42-36, 62-64, 7, 8
65
66
3-6
43-46, 48-51,53-56, 58-61,
9-12, 14-17, 19-22, 24-27
2, 67, 68
1, 18, 35, 52
13, 23, 47, 57
S
YMBOL
A0-A18
WE
OE
CS1 - CS4
I/O0-I/O31
NC
V
CC
V
SS
D
ESCRIPTION
Address Enable
WriteEnable
Output Enable
Chip Enable
Data Input/Output
No Connection
+3.3V Power Supply
Ground
89LV1632
T
ABLE
2. 89LV1632 A
BSOLUTE
M
AXIMUM
R
ATINGS
(V
OLTAGE REFERENCED TO
V
SS
= 0V)
P
ARAMETER
Power Supply Voltage Relative to V
SS
Voltage Relative to V
SS
for Any Pin Except V
CC
Weight
Thermal Resistance
Power Dissipation
Operating Temperature
Storage Temperature
T
JC
P
D
T
A
T
S
--
-55
-65
S
YMBOL
V
CC
V
IN
, V
OUT
M
IN
-0.5
-0.5
M
AX
+4.6
V
CC
+0.5
42
3.6
4.0
+125
+150
U
NITS
V
V
Grams
°
C/W
Memory
W
°
C
°
C
T
ABLE
3. 89LV1632 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Supply Voltage, (Operating Voltage Range)
Input High Voltage
Input Low Voltage
1. V
IH
(max) = V
CC
+ 2V ac (pulse width < 10ns) for I < 80 mA.
2. V
IL
(min) = -2.0V ac; (pulse width < 20 ns) for I < 80 mA.
S
YMBOL
V
CC
V
IH
V
IL
M
IN
3.0
2.2
-0.5
(2)
M
AX
3.6
V
CC
+ 0.5
(1)
0.8
U
NITS
V
V
V
11.02.15 Rev 5
All data sheets are subject to change without notice
2
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
4. 89LV1632 D
ELTA
L
IMITS
P
ARAMETER
I
CC
I
SB
I
SB1
I
LI
V
ARIATIONL
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
89LV1632
T
ABLE
5. 89LV1632 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Operating Current :
-20
-25
-30
Standby Power Supply Current
CMOS Standby Power Supply
Current
Output Low Voltage
Output High Voltage
Input Capacitance
1
CS1 - CS4,
OE, WE
I/O0-7, I/O8-15, I/O16-23,
I/O24-31
A0 - A18
Output Capacitance
1
1. Guaranteed by design.
S
YMBOL
T
EST
C
ONDITIONS
I
LI
I
LO
I
CC
V
IN
= 0 to V
CC
CS = V
IH
, V
OUT
= V
SS
to V
CC
Min. Cycle, 100% Duty, CS = V
IL
,
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
CS= V
IH
, Min Cycle
CS > V
CC
- 0.2V, f = 0 MHz, V
IN
>
V
CC
- 0.2V or
V
IN <
0.2V
I
OL
= + 8.0 mA
I
OH
= -4.0 mA
V
IN
= 0 V
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
-
-
-
1, 2, 3
1, 2, 3
--
--
-
-
-
--
--
330
320
310
240
40
mA
mA
M
IN
-8.0
-8.0
T
YP
--
--
M
AX
+8.0
+8.0
U
NITS
uA
uA
mA
Memory
I
SB
I
SB1
V
OL
V
OH
C
IN
1, 2, 3
1, 2, 3
4, 5, 6
--
2.4
--
--
0.4
--
7
28
7
7
32
V
V
pF
C
OUT
V
I/O
= 0 V
4, 5, 6
8
pF
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Pulse Level
11.02.15 Rev 5
M
IN
0.0
T
YP
--
M
AX
3.0
U
NITS
V
All data sheets are subject to change without notice
3
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Output Timing Measurement Reference Level
Input Rise/Fall Time
Input Timing Measurement Reference Level
M
IN
--
--
--
T
YP
--
--
--
89LV1632
M
AX
1.5
3.0
1.5
U
NITS
V
ns
V
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
T
ABLE
7. 89LV1632 AC C
HARACTORISTICS FOR
R
EAD
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Read Cycle Time
-20
-25
-30
Address Access Time
-20
-25
-30
Chip Select Access Time
-20
-25
-30
Output Enable to Output Valid
-20
-25
-30
Chip Enable to Low-Z Output
-20
-25
-30
Output Enable to Low-Z Output
-20
-25
-30
Chip Enable Deselect to High-Z Output
-20
-25
-30
Output Enable Deselect to High-Z Output
-20
-25
-30
S
YMBOL
t
RC
S
UBGROUPS
9, 10, 11
20
25
30
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
5
6
8
--
--
--
5
6
8
--
--
--
ns
0
0
0
--
--
--
ns
3
3
3
--
--
--
ns
--
--
--
10
12
14
ns
--
--
--
20
25
30
ns
--
--
--
20
25
30
ns
--
--
--
--
--
--
ns
M
IN
T
YP
M
AX
U
NITS
ns
t
AA
Memory
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
11.02.15 Rev 5
All data sheets are subject to change without notice
4
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
7. 89LV1632 AC C
HARACTORISTICS FOR
R
EAD
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Output Hold from Address Change
-20
-25
-30
Chip Select to Power Up Time
-20
-25
-30
Chip Select to Power DownTime
-20
-25
-30
S
YMBOL
t
OH
S
UBGROUPS
9, 10, 11
3
5
6
9, 10, 11
--
--
--
9, 10, 11
--
--
--
10
15
20
0
0
0
--
--
--
M
IN
T
YP
89LV1632
M
AX
--
--
--
ns
--
--
--
ns
--
--
--
U
NITS
ns
T
PU
T
PD
T
ABLE
8. 89LV1632 F
UNCTIONAL
D
ESCRIPTION
CS
H
L
L
L
1. X = don’t care.
WE
X
1
H
H
L
OE
X
1
H
L
X
1
M
ODE
Not Select
Output Disable
Read
Write
I/O P
IN
High-Z
High-Z
D
OUT
D
IN
S
UPPLY
C
URRENT
I
SB
, I
SB1
I
CC
I
CC
I
CC
Memory
T
ABLE
9. 89LV1632 AC C
HARACTORISTICS FOR
W
RITE
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Write Cycle Time
-20
-25
-30
Chip Select to End of Write
-20
-25
-30
Address Set-up Time
-20
-25
-30
S
YMBOL
t
WC
S
UBGROUPS
9, 10, 11
20
25
30
9, 10, 11
14
15
17
9, 10, 11
0
0
0
--
--
--
--
--
--
--
--
--
--
--
--
ns
--
--
--
--
--
--
ns
M
IN
T
YP
M
AX
U
NITS
ns
t
CW
t
AS
11.02.15 Rev 5
All data sheets are subject to change without notice
5
©2015 Maxwell Technologies.
All rights reserved.
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

89LV1632RPQI-30 Related Products

89LV1632RPQI-30 89LV1632RPQI-25 89LV1632RPQH-30
Description SRAM Module, 512KX32, 30ns, CMOS, CQFP68, QFP-68 SRAM Module, 512KX32, 25ns, CMOS, CQFP68, QFP-68 SRAM Module, 512KX32, 30ns, CMOS, CQFP68, QFP-68
Maker Data Device Corporation Data Device Corporation Data Device Corporation
package instruction QFP, QFP, QFP,
Reach Compliance Code compliant compliant compliant
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 30 ns 25 ns 30 ns
JESD-30 code S-CQFP-G68 S-CQFP-G68 S-CQFP-G68
length 37.9476 mm 37.9476 mm 37.9476 mm
memory density 16777216 bit 16777216 bit 16777216 bit
Memory IC Type SRAM MODULE SRAM MODULE SRAM MODULE
memory width 32 32 32
Number of functions 1 1 1
Number of terminals 68 68 68
word count 524288 words 524288 words 524288 words
character code 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 512KX32 512KX32 512KX32
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code QFP QFP QFP
Package shape SQUARE SQUARE SQUARE
Package form FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 6.1976 mm 6.1976 mm 6.1976 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal form GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location QUAD QUAD QUAD
width 37.9476 mm 37.9476 mm 37.9476 mm

Recommended Resources

Super class A amplifier circuit

Low light measurement circuit

Power supply circuit diagram of EMC EM-1 color display

10Hz～100kHz ramp signal oscillator

Pin function diagram of VD5026/27

DSP Design Scheme for Power Electronics Control System
[align=left]Author: Wang Qi and Chen Baichao from Wuhan University Source: Single Chip Microcomputer and Embedded System Application [/align] [align=left][b]Abstract [/b] Taking the motor control chip...
hellodsp DSP and ARM Processors
If the divisor is not a power of 2, it will take up a lot of resources.
As the title says, I want to divide 833333. Direct division will take up about 1000 logic units. If I divide 1048576 (2 to the 20th power), very few resources will be used, but the precision is not en...
小an FPGA/CPLD
A ZedBoad development board is basically new and is packaged in
[color=#444444][font=Tahoma,]A zedboad development board is basically new. The packaging and CD are also here. It is basically new. If you need it, please contact my QQ 2638823746[/font][/color] [colo...
2638823746 Buy&Sell
MCU Application Programming Skills (FAQ) 8
40. What is the concept of Delta-Sigma software measurement? Answer: The Delta-Sigma principle is generally used in ADC applications. Specifically, the working principle of Delta-Sigma ADC is that a m...
songbo MCU
Problems with generating LINUX device tree DTS files
Some files are needed when generating the device tree, but there are no hps_clock_info.xml and hps_common_board_info.xml files in my new project. I would like to ask if there are any friends who have ...
chunlei9924 FPGA/CPLD
430 I/O interruption question
#includeint main(void) {WDTCTL = WDTPW | WDTHOLD;// Stop watchdog timerP1DIR |= BIT0;// Set P1.0 to output directionP1OUT = ~BIT0;P1REN |= BIT4;// Enable P1.4 internal resistanceP1OUT |= BIT4;// Set P...
zhanghuaihe01 Microcontroller MCU
Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components

  1. 51740-10504004AALF
  2. M83723/71R1006N
  3. TNPW0603294RBEEC
  4. 1812C0G181JHST
  5. RIAN16TEB273JT
  6. VGAS120642D390DP
  7. PCF0402-12-1K2LT1
  8. CC2-20500ABSGGHWS
  9. BZQ5235C
  10. D3961HB-2P-YL-G30
  11. CRW1218J1K00E04Z
  12. SMAJ43A

Popular Articles

  1. Causes of explosion-proof motor vibration_Solutions when explosion-proof motor vibrates
  2. Huawei nova9 released, Hongmeng imaging flagship, supports binocular stereo vision
  3. Intel talks about the Metaverse: Chip computing power needs to be increased 1,000 times
  4. MediaTek and AMD Create AMD RZ600 Series Wi-Fi 6E Modules
  5. Detailed explanation of the main circuit inside the inverter
  6. Domestically developed chips are too powerful! iPhone 13 Pro Max is outdone
  7. Cerence and Mercedes-Benz Collaborate to Provide Augmented Intelligence for EQS’s MBUX System
  8. What is a power analyzer
  9. The use of FFT in oscilloscope
  10. 51 MCU Introduction - SPI Bus

Technical ResourceMore

  1. Current-sharing control method for parallel connection of modular DC power supplies
  2. Zero Voltage Switching of Flyback Switching Power Supply
  3. en.DM00615085
  4. New sensorless commutation technique for brushless DC motors
  5. V2X anti-collision algorithm reference learning
  6. Detailed explanation of automobile air conditioning system
  7. Radio Magazine, Issue 11, 1998.pdf
  8. How to solve the problem \"Program \"gcc\" not found in PATH\" in TrueSTUDIO
  9. Open source Verilog simulation tool: Icarus
  10. Signals and Systems: Using MATLAB

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2089  2611  2442  683  1529  43  53  50  14  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号