16 Megabit (512K x 32-Bit)
Low Voltage MCM SRAM
16 Megabit (512k x 32-bit) SRAM MCM
CS 1-4
Address
89LV1632
OE, WE
Power
4Mb SRAM
4Mb SRAM
4Mb SRAM
4Mb SRAM
Ground
89LV1632
MCM
Memory
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Logic Diagram
F
EATURES
:
• Four 512k x 8 SRAM die
• R
AD
-P
AK
® Technology radiation-hardend against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects:
- SEL > 68 MeV-cm
2
/mg
- SEU threshold = 3 MeV-cm
2
/mg
- SEU saturated cross section: 6E-9 cm
2
/bit
• Package: 68-pin quad flat package
• Completely static memory - no clock or timing strobe
required
• Fast Access Time:
• -20, 25, 30 ns Access Times
• Internal bypass capacitor
• High-speed silicon-gate CMOS Technology
• 3.3 V ± 10% power supply
• Equal address and chip enable access times
• Three-state outputs
• All inputs and outputs are TTL compatible
D
ESCRIPTION
:
Maxwell Technologies’ 89LV1632 high-performance 16 Mega-
bit Multi-Chip Module (MCM) Static Random Access Memory
features a greater than 100 krad(Si) total dose tolerance,
depending upon space mission. The four 4-Megabit SRAM die
and bypass capacitors are incorporated into a high-reliable
hermetic quad flat-pack ceramic package. With high-perfor-
mance silicon-gate CMOS technology, the 89LV1632 reduces
power consumption and eliminates the need for external
clocks or timing strobes. It is equipped with output enable
(OE) and four byte chip enables (CS1 - CS4) inputs to allow
greater system flexibility. When OE input is high, the output is
forced to high impedance.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age.It eliminates the need for box shielding while providing the
required radiation shielding for a lifetime in orbit or a space
mission. In a GEO orbit, R
AD
-P
AK
® packaging provides greater
than 100 krad(Si) total radiation dose tolerance. This product
is available with screening up to Maxwell Technologies self-
defined Class K.
11.02.15 Rev 5
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
1. P
INOUT
D
ESCRIPTION
P
IN
34-28, 42-36, 62-64, 7, 8
65
66
3-6
43-46, 48-51,53-56, 58-61,
9-12, 14-17, 19-22, 24-27
2, 67, 68
1, 18, 35, 52
13, 23, 47, 57
S
YMBOL
A0-A18
WE
OE
CS1 - CS4
I/O0-I/O31
NC
V
CC
V
SS
D
ESCRIPTION
Address Enable
WriteEnable
Output Enable
Chip Enable
Data Input/Output
No Connection
+3.3V Power Supply
Ground
89LV1632
T
ABLE
2. 89LV1632 A
BSOLUTE
M
AXIMUM
R
ATINGS
(V
OLTAGE REFERENCED TO
V
SS
= 0V)
P
ARAMETER
Power Supply Voltage Relative to V
SS
Voltage Relative to V
SS
for Any Pin Except V
CC
Weight
Thermal Resistance
Power Dissipation
Operating Temperature
Storage Temperature
T
JC
P
D
T
A
T
S
--
-55
-65
S
YMBOL
V
CC
V
IN
, V
OUT
M
IN
-0.5
-0.5
M
AX
+4.6
V
CC
+0.5
42
3.6
4.0
+125
+150
U
NITS
V
V
Grams
°
C/W
Memory
W
°
C
°
C
T
ABLE
3. 89LV1632 R
ECOMMENDED
O
PERATING
C
ONDITIONS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Supply Voltage, (Operating Voltage Range)
Input High Voltage
Input Low Voltage
1. V
IH
(max) = V
CC
+ 2V ac (pulse width < 10ns) for I < 80 mA.
2. V
IL
(min) = -2.0V ac; (pulse width < 20 ns) for I < 80 mA.
S
YMBOL
V
CC
V
IH
V
IL
M
IN
3.0
2.2
-0.5
(2)
M
AX
3.6
V
CC
+ 0.5
(1)
0.8
U
NITS
V
V
V
11.02.15 Rev 5
All data sheets are subject to change without notice
2
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
4. 89LV1632 D
ELTA
L
IMITS
P
ARAMETER
I
CC
I
SB
I
SB1
I
LI
V
ARIATIONL
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
+10% of stated value in table 5
89LV1632
T
ABLE
5. 89LV1632 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Leakage Current
Output Leakage Current
Operating Current :
-20
-25
-30
Standby Power Supply Current
CMOS Standby Power Supply
Current
Output Low Voltage
Output High Voltage
Input Capacitance
1
CS1 - CS4,
OE, WE
I/O0-7, I/O8-15, I/O16-23,
I/O24-31
A0 - A18
Output Capacitance
1
1. Guaranteed by design.
S
YMBOL
T
EST
C
ONDITIONS
I
LI
I
LO
I
CC
V
IN
= 0 to V
CC
CS = V
IH
, V
OUT
= V
SS
to V
CC
Min. Cycle, 100% Duty, CS = V
IL
,
I
OUT
= 0 mA
V
IN
= V
IH
or V
IL
CS= V
IH
, Min Cycle
CS > V
CC
- 0.2V, f = 0 MHz, V
IN
>
V
CC
- 0.2V or
V
IN <
0.2V
I
OL
= + 8.0 mA
I
OH
= -4.0 mA
V
IN
= 0 V
S
UBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
-
-
-
1, 2, 3
1, 2, 3
--
--
-
-
-
--
--
330
320
310
240
40
mA
mA
M
IN
-8.0
-8.0
T
YP
--
--
M
AX
+8.0
+8.0
U
NITS
uA
uA
mA
Memory
I
SB
I
SB1
V
OL
V
OH
C
IN
1, 2, 3
1, 2, 3
4, 5, 6
--
2.4
--
--
0.4
--
7
28
7
7
32
V
V
pF
C
OUT
V
I/O
= 0 V
4, 5, 6
8
pF
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Input Pulse Level
11.02.15 Rev 5
M
IN
0.0
T
YP
--
M
AX
3.0
U
NITS
V
All data sheets are subject to change without notice
3
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Output Timing Measurement Reference Level
Input Rise/Fall Time
Input Timing Measurement Reference Level
M
IN
--
--
--
T
YP
--
--
--
89LV1632
M
AX
1.5
3.0
1.5
U
NITS
V
ns
V
T
ABLE
6. 89LV1632 AC O
PERATING
C
ONDITIONS AND
C
HARACTERISTICS
T
ABLE
7. 89LV1632 AC C
HARACTORISTICS FOR
R
EAD
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Read Cycle Time
-20
-25
-30
Address Access Time
-20
-25
-30
Chip Select Access Time
-20
-25
-30
Output Enable to Output Valid
-20
-25
-30
Chip Enable to Low-Z Output
-20
-25
-30
Output Enable to Low-Z Output
-20
-25
-30
Chip Enable Deselect to High-Z Output
-20
-25
-30
Output Enable Deselect to High-Z Output
-20
-25
-30
S
YMBOL
t
RC
S
UBGROUPS
9, 10, 11
20
25
30
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
9, 10, 11
--
--
--
5
6
8
--
--
--
5
6
8
--
--
--
ns
0
0
0
--
--
--
ns
3
3
3
--
--
--
ns
--
--
--
10
12
14
ns
--
--
--
20
25
30
ns
--
--
--
20
25
30
ns
--
--
--
--
--
--
ns
M
IN
T
YP
M
AX
U
NITS
ns
t
AA
Memory
t
CO
t
OE
t
OLZ
t
LZ
t
OHZ
t
HZ
11.02.15 Rev 5
All data sheets are subject to change without notice
4
©2015 Maxwell Technologies.
All rights reserved.
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM
T
ABLE
7. 89LV1632 AC C
HARACTORISTICS FOR
R
EAD
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Output Hold from Address Change
-20
-25
-30
Chip Select to Power Up Time
-20
-25
-30
Chip Select to Power DownTime
-20
-25
-30
S
YMBOL
t
OH
S
UBGROUPS
9, 10, 11
3
5
6
9, 10, 11
--
--
--
9, 10, 11
--
--
--
10
15
20
0
0
0
--
--
--
M
IN
T
YP
89LV1632
M
AX
--
--
--
ns
--
--
--
ns
--
--
--
U
NITS
ns
T
PU
T
PD
T
ABLE
8. 89LV1632 F
UNCTIONAL
D
ESCRIPTION
CS
H
L
L
L
1. X = don’t care.
WE
X
1
H
H
L
OE
X
1
H
L
X
1
M
ODE
Not Select
Output Disable
Read
Write
I/O P
IN
High-Z
High-Z
D
OUT
D
IN
S
UPPLY
C
URRENT
I
SB
, I
SB1
I
CC
I
CC
I
CC
Memory
T
ABLE
9. 89LV1632 AC C
HARACTORISTICS FOR
W
RITE
C
YCLE
(V
CC
= 3.3+ 10%, T
A
= -55
TO
+125
°
C,
UNLESS OTHERWISE NOTED
)
P
ARAMETER
Write Cycle Time
-20
-25
-30
Chip Select to End of Write
-20
-25
-30
Address Set-up Time
-20
-25
-30
S
YMBOL
t
WC
S
UBGROUPS
9, 10, 11
20
25
30
9, 10, 11
14
15
17
9, 10, 11
0
0
0
--
--
--
--
--
--
--
--
--
--
--
--
ns
--
--
--
--
--
--
ns
M
IN
T
YP
M
AX
U
NITS
ns
t
CW
t
AS
11.02.15 Rev 5
All data sheets are subject to change without notice
5
©2015 Maxwell Technologies.
All rights reserved.
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