SIHFU9010-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFU9010-E3: DescriptionTRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size1MB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFU9010-E3 Overview

TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power

SIHFU9010-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-251
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	136 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	5.3 A
Maximum drain current (ID)	5.3 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	21 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= - 10 V

9.1

3.0

5.9

Single

FEATURES

- 50

0.50

•

Halogen-free According to IEC 61249-2-21

Definition

• Surface Mountable (Order as IRFR9010, SiHFR9010)

• Straight Lead Option (Order as IRFU9010, SiHFU9010)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The Power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

Power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.

DPAK (TO-252)

SiHFR9010TR-GE3

IRFR9010TRPbF

SiHFR9010T-E3

IRFR9010TR

SiHFR9010T

DPAK (TO-252)

SiHFR9010TRL-GE3

IRFR9010TRLPbF

SiHFR9010TL-E3

IRFR9010TRL

SiHFR9010TL

IPAK (TO-251)

SiHFU9010-GE3

IRFU9010PbF

SiHFU9010-E3

IRFU9010

SiHFU9010

DPAK

(TO-252)

IPAK

(TO-251)

D S

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SnPb

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9010-GE3

IRFR9010PbF

SiHFR9010-E3

IRFR9010

SiHFR9010

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Current

at - 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

- 50

± 20

- 5.3

- 3.3

- 21

0.20

136

- 5.3

2.5

5.8

- 55 to + 150

300

UNIT

W/°C

V/ns

°C

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

= 25 °C

dV/dt

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

, T

stg

for 10 s

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V

= - 25 V, starting T

= 25 °C, L = 9.7 mH, R

= 25

Ω,

peak I

= - 5.3 A.

c. I

≤

- 5.3 A, dI/dt

≤

- 80 A/μs, V

≤

40 V, T

≤

150 °C, suggested R

= 24

Ω.

d. 0.063" (1.6 mm) from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91378

S10-1135-Rev. C, 10-May-10

www.vishay.com

SIHFU9010-E3 Related Products

	SIHFU9010-E3	SIHFR9010T	SIHFR9010TRL-GE3	SIHFR9010TR-GE3	SIHFR9010T-E3	SIHFR9010TL-E3	SIHFR9010TL	SIHFR9010-E3	SIHFU9010-GE3	SIHFR9010-GE3
Description	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT, IPAK-3, FET General Purpose Power	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power
Is it lead-free?	Lead free	Contains lead	Lead free	Lead free	Lead free	Lead free	Contains lead	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	incompatible	conform to	conform to	conform to	conform to	incompatible	conform to	conform to	conform to
Maker	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay
Parts packaging code	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-252
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ	136 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Maximum drain current (Abs) (ID)	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A
Maximum drain current (ID)	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A	5.3 A
Maximum drain-source on-resistance	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251	TO-252
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e0	e3	e3	e3	e3	e0	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	3	2	2	2	2	2	2	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240	260	260	260	260	240	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W	25 W
Maximum pulsed drain current (IDM)	21 A	21 A	21 A	21 A	21 A	21 A	21 A	21 A	21 A	21 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	YES	YES	YES	YES	NO	YES
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30	40	40	40	40	30	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Humidity sensitivity level	-	-	1	1	1	1	-	1	-	1

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