US3K datasheet, PDF - EEWORLD Datasheet

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US3K: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size113KB，2 Pages; ManufacturerRugao Dachang Electronics Co., Ltd.

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US3K Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, SMC, 2 PIN

US3K Parametric

Parameter Name	Attribute value
Maker	Rugao Dachang Electronics Co., Ltd.
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	800 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.075 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL

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SIYU

R

表面安装高效率整流二极管

反向电压

50 --- 1000 V

正向电流

3.0 A

特征

Features

SMC

US3A ...... US3M

Surface Mounted High-efficiency Rectifier

Reverse Voltage 50 --- 1000 V

Forward Current 3.0 A

·反向漏电流½

Low reverse leakage

.246(6.22)

.220(5.59)

.128(3.25)

.108(2.75)

·正向浪涌承受½力较强

High forward surge capability

·高温焊接保证

High temperature soldering guaranteed:

260℃/10

秒

seconds at terminals

·引线和管½皆符合RoHS标准。

Lead and body according with RoHS standard

.280(7.11)

.260(6.60)

.012(0.305)

.006(0.152)

.103(2.62)

.079(2.00)

.050(1.27)

.030(0.76)

.320(8.13)

.305(7.75)

机械数据

Mechanical Data

.008(0.203)

.002(0.051)

Unit：inch（mm）

·封装: 塑料封装

Case: Molded plastic body

·端子: 焊料被镀

Terminals: Solder plated

·极性: 色环端为负极

Polarity: Color band denotes cathode end

·安装½½: 任意

Mounting Position: Any

极限值和温度特性

TA = 25℃

除非另有规定。

Maximum Ratings & Thermal Characteristics

符号

Ratings at 25℃ ambient temperature unless otherwise specified.

Symbols

US3A US3B US3D US3G US3J US3K US3M

最大可重复峰值反向电压

Maximum repetitive peak reverse voltage

单½

Unit

V

A

℃/W

V

RRM

V

RMS

V

DC

I

F(AV)

I

FSM

R

θJA

Tj, TSTG

50

35

50

100

70

100

200

140

200

400

280

400

3.0

100

60

600

420

600

800

560

800

1000

700

1000

最大均方根电压

Maximum RMS voltage

最大直流阻断电压

Maximum DC blocking voltage

最大正向平均整流电流

Maximum average forward rectified current

峰值正向浪涌电流 8.3ms单一正弦半波

Peak forward surge current 8.3 ms single half sine-wave

典型热阻

Typical thermal resistance

工½结温和存储温度

Operating junction and storage temperature range

-55 --- +150

℃

电特性

TA = 25℃

除非另有规定。

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

符号

Symbols

最大正向电压

Maximum forward voltage

US3A US3B US3D US3G US3J

1.0

1.3

10

500

50

15

US3K US3M

1.7

单½

Unit

V

μA

I

F

= 3.0A

TA= 25℃

TA= 125℃

I

F

=0.5A I

R

=1.0A I

RR

=0.25A

V

F

I

R

trr

C

j

最大反向电流

Maximum reverse current

最大反向恢复时间

MAX. Reverse Recovery Time

75

nS

pF

典型结电容

Type junction capacitance

V

R

= 4.0V, f = 1MHz

大昌电子

DACHANG ELECTRONICS

US3K Related Products

	US3K	US3A	US3B	US3D	US3G	US3J	US3M
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, SMC, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, SMC, 2 PIN
package instruction	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V	1 V	1 V	1 V	1.3 V	1.7 V	1.7 V
JESD-30 code	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum repetitive peak reverse voltage	800 V	50 V	100 V	200 V	400 V	600 V	1000 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.075 µs	0.05 µs	0.05 µs	0.05 µs	0.05 µs	0.075 µs	0.075 µs
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	-	1	1	1	1	-	-

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