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T-IXTD01N100

Description
Power Field-Effect Transistor, 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size180KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

T-IXTD01N100 Overview

Power Field-Effect Transistor, 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

T-IXTD01N100 Parametric

Parameter NameAttribute value
MakerIXYS
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain-source on-resistance80 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
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