J.£ii£.u <^>£.mi-L.onauctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
GERMANIUM TYPES
•M
I
1
2N1924, 2N1925, and 2N1926 are PNP
germanium alloy transistors for high voltage general purpose low
frequency applications.
Excellent reliability in use is assured by inclusion of a 100%
hermeticity test* and military environmental testing.
Reliable circuit design is assured by a unique Reliability-Index,
and high temperature Icno and low temperature forward current
gain 1000 hour life end points.
The high value of Reliability-Index is achieved by exacting control
of parts and processes, and getter encapsulation, to prevent junction
contamination.
absolute maximum ratings (25°C)
Voltages
DIMENSIONS WITHIN
JEDEC OUTLINE
TO-5
360 MIN
335MAX
325 MIN
Collector to Base
Collector to Emitter (R,,
K
< 10K)
Collector to Emitter (R,,
K
g 10K)
(V
I1E
= +1.5v)
Emitter to Base
Collector Current (RMS)
Temperatures
VCHO
V
OEl
,
V
CEX
V
E
i,
(
.
I('M
- 60 VOltS
— 40 VOltS
•en It
This .-one is controlled for auto
rralic handling The variation in Ktual
diameter within this lone shall not eiceed
- 50 volts
- 25 volts
- 500 ma
- 65 to + 100°C
- 6 5 t o + 85°C
260°C
225 mw
010.
Hen J: Measmed trom ma> diameter
-'
Ihe actual device.
•en I: The specified lead diameter ap-
plies ;n the zone between 050 and 250
Item the base seat. Between 250 and S
ma<imum ot.02! dtamelei is held Outside
al these zones the lead diameter is not
:r >il teads may be insetted, ftilhcul
dama<e. in .031 hofes while tiartsistor
enters 371 hole concentnc xith lead hole
100 MIN
(NOTED
Z60
216
U U
I
D 0 0
!""' I90MIN~1
1 SMI
N
I
3 LEADS
(NOTE 3)
Storage
Operating
Lead Temperature, 1/16" ±1/32" from
case for 10 seconds maximum
Total Transistor Dissipation
T
aTC
Tj
"'!'
//!/' V\NS
X^^X
THIS LEAD
(Derate 3.7 mw/°C increase in ambient temperature above 25°C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality
Semi-Conductors
ELECTRICAL CHARACTERISTICS ( T
A
- 2 5 C )
TEST
DC Chmr»ci»H.»tio«
Subgroup I
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Reach-through Voltage
Emitter Cutoff Current
Subgroup 11
Collector Cutoff Current
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Subgroup III
Base Input Voltage, Common Emitter
Collector Saturation Voltage
CONDITIONS
SYMBOL.
2N19^-4
MIN.
TV- "
MAX.
MIN.
2NI935
TY*>. MAX.
MIN.
2N192S
TV"-.
MAX.
AOL
INSP.
LKVBL.
UNITS
I,, = -200,*
R»«=IOIC ohms. Ic«- 600 ,j
V»«= + 1.5v, R
n E
= 10K ohms, I
c
= —50jui
V« = -25v
V
c
. = -45v
!<. a — 20ma, Vr«= — Iv (Note 1)
fc »-100m«,V™=-lv
V,,.,
Vcu
VCM
VRT
I,,o
IrM
hr.
volts
volts
volts
volts
r*»
-60
-40
-50
-50
- 3
-4
50
45
-.235
-.080
-1J3
(
-60
-40 ,
-50
- 50
- 10
- 10
(59)65
.. •:'
—3
-4
70
60
-.230
-.085
-1.00
- 10
- 10
(80)90
-60
-40
-50
-50
-3
,
(
-lo|
1%
11
f*a
hr.
V,.
34(38)
30
volts
volts
ma
-.200
-.050
53(59)
47
72(80)
65
-4
-10)
85 ( 1 I O ) I 2 I (
0.0%
80
\0
-.2J5
11
-.280)
I,,. =-20ma,V
c
.= -lv
lu 3—20 ma. In as shown
:•
Vr.(SAT)
ei.
-.300 -.190
-.110 -.053
-.290
-.110 -.060
-.090
-0.67
-.110
)
1%
L6
Subgroup I
AC Forward Current Traiufet Ratio
Input Impedance
' . •
Output Admittance
Reverse Voltage Transfer Ratio^ --
Subgroup 11
Cutoff Frequency.,
Output Capacity -.
.„- .
I.
I.
1.
I.
=
=.
=.
=
lma,V,,= -5v,f=lkc
lnM,Vr,=-5v,f=lkc
1 ma, V,.,»-5v, f = l k c
1 ma, V,...=-5v, f = l k c
:
h»
h.
h.
hr.
ohms
(<mhos
xlO-«
30
700
15
2.0
44
14M
30
4J
64 , 44
2200
1200
•
60
20
8.0
3.0
.
M
2000
35
«.»
3JI
M
88
3200
65
9.0
60
1500
23
4.0
1J
80
2500
40
7.0
4.0
-
120)
4200'
70J
10.0 )
i
9 34t
UW
L6
1. -lma,Vc.--Sv
'
I. » 1 ma,V
c
,= -5v, l.lmc
fu» '-,
C^
me
Pt
... "-
:j
. -I , ' "•
'• . ' • ~ "•.'. '
I:
.1.0 " ' :.;-•»••••...,••. '
1.3
.
-, . ; ,.
».
30
... . • : , ' • •
'
-,' •-. '-'.
'.
30
w •.•
-•
so
Note F: A minimum of 95% of the h
rK
dUtribution U normally contained between values in parenlhntt.
: , - - , ' ' . "
••
RELIABILITY SPECIFICATIONS
TBST
Subgroup 1
, Physical Inspection
Appearance
Lead Soldcrabilily
Subgroup II
Temperature Cycling
Thermal Shock
Subgroup III
Shock, opcralinf
Constant Acceleration
Vibration Fatigue
Vibration, Variable Frequency
.
'. , '
Subgroup IV
Lead Fatigue
END POINTS (Subgroup II and UI>
Collector Cutoff Current
Forward Current Transfer Ratio'
2N1924
2NI923
CONDITIONS
1
AOL.
25
1.0
1.0
~
%
S*Mn.lNO
uivn.
L5
L8
LD
L5
MIL-S-19500
T1STV- . --'•".-
Subgroup V
"" 1
K
1
Storage Life. ;
:
:
^
f
(1000houn>:
;;
Subgroup VI
• ;••
'-
Intermittent Power Lit* r- :
(lOOOhoun)
-- -
:
-
END POINTS (Subgroup VJ)
ReliabiUty-Indel
:
1
CONDITIONS
M1L-S- 19500 Method B
100*-(-10'C.-O°C
• .
•••'
MAXIMUM PAIL.UIW MAT!, i
(ta percent pe» IfJOO hours witk 90* CBnfidenc.)
•«;'"'
5
.*' '
••/'••
MIL-S-19500
-6S°tolOO°C,IOcydev
0°loSrC,5cycle«
MIL-S-19500
1000 Q. 3 blow, each orientation
of appro*. O.g msec.
,
10.000 O '
~
100
«
35 |
20O.
*
w
' (
•-
*
*
4.0
M1L-S- 19500 Method B
-_
:
225mw,T. - 23* ± 4°C
. '
Vc, - - 22 .Sv, 1 - — 10 ma
.
On 50±2 min. Off I0±2 min
»»lli»«l
5
(25°C End Points)
10 ( -55°Cand+ 70°CEndPointe)
UnM»
Kin.
Tj».
Mu.
40
•
it
1
MIL-S-19500.' •
"
>
!»•*
4.0
•ym>»
UnlM
1-5
Mb*.
M»)u
Collector Cutoff Current
Forward Current Transfer
Ratio
2NI924
2N1925
2N1926
END POINTS (Subgroup
V and VI)
Collector Cutoff Current
Forward Current Transfer
Hatto-
2N1924
2NI925
2NI926
Based on 23°C Forward Current
Transfer Ratio, Subgroup VI
V
r
,=-10r,T
t
-+70'±l°C
I,- =-20ma,V«-l»,
T
1
= -55'±2'C i
I™,
h
r
.
h
at
RIi
M
3.33
12
-80
33
46
63
-150
hm
15
24
32
V
B
30V,T
A
= 25°C
l,
;
=
— 20ma, V
rK
= — IV, T
A
= 25°C
IL-WI
h,«
p*
30
48
65
-15
71
IUO
133
V
c
n = — 30v. TA — 25 °C
l
c
=.-20ma,V,.,»-!v,
T*=25°C
•I'iKt
M
-15
30 .
48
65
71
IUO
133
^-•' ;•;:;• 2Ni92« ' • • - - • -
hfL
t
•
'•'
'
' •'
hv
K
hr.
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e
Microchip MCU
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