Am29F016D-90F4CB datasheet, PDF

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Am29F016D-90F4CB: Description2M X 8 FLASH 5V PROM, 120 ns, PDSO48; Categorystorage; File Size830KB，45 Pages; ManufacturerAMD; Websitehttp://www.amd.com

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Am29F016D-90F4CB Overview

2M X 8 FLASH 5V PROM, 120 ns, PDSO48

Am29F016D-90F4CB Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	48
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
maximum access time	120 ns
Processing package description	MO-142DD, TSOP-48
state	TRANSFERRED
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, THIN PROFILE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.5000 mm
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	2M X 8
storage density	1.68E7 deg
operating mode	ASYNCHRONOUS
Number of digits	2.10E6 words
Number of digits	2M
Memory IC type	FLASH 5V PROM
serial parallel	PARALLEL

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Am29F016D

Data Sheet

July 2003

The following document specifies Spansion memory products that are now offered by both Advanced

Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-

inally developed the specification, these products will be offered to customers of both AMD and

Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a Spansion product. Any

changes that have been made are the result of normal datasheet improvement and are noted in the

document revision summary, where supported. Future routine revisions will occur when appropriate,

and changes will be noted in a revision summary.

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order

these products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about Spansion

memory solutions.

Publication Number

21444

Revision

Amendment

Issue Date

March 23, 2001

TABLE OF CONTENTS

Product Selector Guide . . . . . . . . . . . . . . . . . . . . .

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Ordering Information . . . . . . . . . . . . . . . . . . . . . . .

Device Bus Operations . . . . . . . . . . . . . . . . . . . . .

DQ3: Sector Erase Timer ....................................................... 23

Figure 5. Toggle Bit Algorithm........................................................ 23

Table 10. Write Operation Status................................................... 24

Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 25

Figure 6. Maximum Negative Overshoot Waveform ...................... 25

Figure 7. Maximum Positive Overshoot Waveform........................ 25

Table 1. Am29F016D Device Bus Operations .................................. 9

Requirements for Reading Array Data ..................................... 9

Writing Commands/Command Sequences .............................. 9

Program and Erase Operation Status .................................... 10

Standby Mode ........................................................................ 10

RESET#: Hardware Reset Pin ............................................... 10

Output Disable Mode.............................................................. 10

Table 2. Sector Address Table........................................................ 11

Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 25

DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26

TTL/NMOS Compatible .......................................................... 26

CMOS Compatible.................................................................. 26

Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 8. Test Setup...................................................................... 27

Table 11. Test Specifications ......................................................... 27

Autoselect Mode..................................................................... 12

Table 3. Am29F016D Autoselect Codes (High Voltage Method).... 12

Key to Switching Waveforms. . . . . . . . . . . . . . . . 27

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28

Read-only Operations............................................................. 28

Figure 9. Read Operation Timings ................................................. 28

Figure 10. RESET# Timings .......................................................... 29

Sector Group Protection/Unprotection.................................... 12

Table 4. Sector Group Addresses................................................... 12

Erase/Program Operations ..................................................... 30

Figure 11. Program Operation Timings..........................................

Figure 12. Chip/Sector Erase Operation Timings ..........................

Figure 13. Data# Polling Timings (During Embedded Algorithms).

Figure 14. Toggle Bit Timings (During Embedded Algorithms)......

Figure 15. DQ2 vs. DQ6.................................................................

Figure 16. Temporary Sector Group Unprotect Timings ................

Temporary Sector Group Unprotect ....................................... 12

Figure 1. Temporary Sector Group Unprotect Operation................ 13

Hardware Data Protection ...................................................... 13

Low V

Write Inhibit ...................................................................... 13

Write Pulse “Glitch” Protection ........................................................ 13

Logical Inhibit .................................................................................. 13

Power-Up Write Inhibit .................................................................... 13

Erase and Program Operations .............................................. 35

Alternate CE# Controlled Writes .................................................... 35

Figure 17. Alternate CE# Controlled Write Operation Timings ...... 36

Common Flash Memory Interface (CFI) . . . . . . . 14

Table 5. CFI Query Identification String .......................................... 14

Table 6. System Interface String..................................................... 14

Table 7. Device Geometry Definition .............................................. 15

Table 8. Primary Vendor-Specific Extended Query ........................ 15

Command Definitions . . . . . . . . . . . . . . . . . . . . . 16

Reading Array Data ................................................................ 16

Reset Command..................................................................... 16

Autoselect Command Sequence ............................................ 16

Byte Program Command Sequence....................................... 16

Unlock Bypass Command Sequence.............................................. 17

Figure 2. Program Operation .......................................................... 17

Chip Erase Command Sequence ........................................... 17

Sector Erase Command Sequence ........................................ 18

Erase Suspend/Erase Resume Commands........................... 18

Figure 3. Erase Operation............................................................... 19

Command Definitions ............................................................. 20

Table 9. Am29F016D Command Definitions................................... 20

Write Operation Status . . . . . . . . . . . . . . . . . . . . 21

DQ7: Data# Polling................................................................. 21

Figure 4. Data# Polling Algorithm ................................................... 21

RY/BY#: Ready/Busy# ...........................................................

DQ6: Toggle Bit I ....................................................................

DQ2: Toggle Bit II ...................................................................

Reading Toggle Bits DQ6/DQ2 ..............................................

DQ5: Exceeded Timing Limits ................................................

Erase and Programming Performance . . . . . . . 37

Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 37

TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 37

Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 38

TS 040—40-Pin Standard Thin Small Outline Package ......... 38

TSR040—40-Pin Reverse Thin Small Outline Package......... 39

TS 048—48-Pin Standard Thin Small Outline Package ......... 40

TSR048—48-Pin Reverse Thin Small Outline Package......... 41

SO 044—44-Pin Small Outline Package ................................ 42

Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 43

Revision A (May 1997) ........................................................... 43

Revision B (January 1998) ..................................................... 43

Revision B+1 (January 1998) ................................................. 43

Revision B+2 (April 1998)....................................................... 43

Revision C (January 1999) ..................................................... 43

Revision C+1 (March 23, 1999).............................................. 43

Revision C+2 (May 17, 1999) ................................................. 43

Revision C+3 (July 2, 1999) ................................................... 43

Revision D (November 16, 1999) ........................................... 43

Revision E (May 19, 2000) ..................................................... 44

Revision E+1 (December 4, 2000) ......................................... 44

Revision E+2 (March 23, 2001) .............................................. 44

Am29F016D

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