J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne,
C158-C159
SCR1200Volts
TELEPHONE: (973) 376-2922
i l l A T™*O
(212)227-6005
110A RMS
FAX: (973) 376-8960
MAXIMUM ALLOWABLE RATINGS
Repetitive Peak
Off-State Voltage,
Type*
VDUM
Repetitive Peak
Reverse Voltage,
V
(l)
V
RHM
Non-repetitive Peak
Reverse Voltage,
VUSM'"
T
c
= + 125°C
T
(
, = -40°C to + 125°C
T
0
= -40°Cto +125°C
C158E, C159E
C158M, C159M
C158S, C159S
C158N, C159N
C158T, C159T
C158P, C159P
C158PA, C159PA
C158PB, C159PB
500 Volts
600
700
800
900
1000
1100
1200
500 Volts
600
700
800
900
1000
1100
1200
600 Volts
720
840
960
1080
1200
1300
1400
(1) Half tine wave voltage pulte, 10 millisecond maximum duration.
RMS On-State Current, I
T
<UMS>
Average On-State Current, I
T ( A V
,
Peak One Cycle Surge (non-rep) On-State Current, I
TSM
Pt (for fusing) for times g: 1.5 milliseconds
Ft (for fusing) for times g 8.3 milliseconds
Critical Rate-of-Rise of On-State Current, di/dt,
During Turn-On Interval
Long Term DI/DT (refer to fig. 18, note 4)
Peak Gate Power Dissipation, P
G M
. . , (Pulse Width = 10/tsec)
Average Gate Power Dissipation, PGIAVI
Peak Negative Gate Voltage, V
GM
Storage Temperature, T
ST
G
Operating Temperature, Tj
Stud Torque
HO Amperes
(see Charts)
1600 Amperes
5200 Ampere
2
seconds
10,500 Ampere
2
seconds
800 Amperes per microsecondf
500 A/> sec*
400 Watts
2 Watts
20 Volts
-40°C to + 125°C
-40°C to +125°C
150 Lb-in (Max), 125 Lb-in (Min)
175 Kg-cm (Max), 150 Kg-cm (Min)
tRequired trigger source — 20 volts, 20 ohms; maximum switching voltage — 1200 volts; short-circuit gate supply current risetime -O.Sjj sac
(This short-circuit current may be measured with a TEKTRONICS current probe.).
dl/dt rating ii *i»abli>hed in accordance with EIA-NEMA Suggested Standard RS-397 Section 5.1.2.4. Immediate/ after each current pulte, off-itore
(blecking) voltage capability may be temporarily lo»t for duration* leu than the period of the applied pulie repetition rate. The pulu
repttitien rate for thil te»t U 400 Hi: The duration of the di/dt telt condition it 5.0 tecondt (minimum).
This rating established by long term life tests on similar devices.
CHARACTERISTICS
TEST
Peak Reverse and
Off-State Current
C158E, C159E
C158M, C159M
C158S, C159S
C1B8N, C159N
C158T, C1B9T
C168P, C159P
C158PA, C169PA
C158PB, C159PB
SYMBOL
IDKU
MIN.
TYP.
MAX.
10
10
10
10
9
7
7
7
UNITS
TEST CONDITION
TV = +25°C
VDNII = VHK« = 500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts peak
1200 Volts peak
and
IIIKK
mA
—
—
—
—
—
3
3
3
3
3
3
3
3
CHARACTERISTICS
TEST
SYMBOL
IDRM
MIN.
TYP.
MAX.
15
UNITS
TEH CONDITION
Peak Reverse and
Off-State Current
C158E, C159E
C1B8M, C159M
C158S.C159S
C1B8K, C159N
C1B8T, C159T
C158P, C159P
C158PA, C159PA
C1B8PB, C159PB
Effective Thermal
Resistance
Critical Exponential Rate
of Rise of Forward Block-
ing Voltage (Higher
values may cause
device switching)
lolding Current
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak On-State Voltage
Turn-On Time (Delay
Time -f Rise Time)
Delay Time
Conventional Circuit
Commutated
Turn-Qff-Time
(with Reverse Voltage)
mA
12
12
12
12
12
12
12
12
.2
500
15
15
15
15
15
17
18
.3
T
c
= 125°C
V,,KM = VBBM = 500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts Beak
1200 Voltsjpeak
Junction to case (DC)
VI.BM, T
c
= + 125°C, Gate open.
and
IHRM
—
R
OJC
—
dv/dt
200
»
watt
V/
M
se
•c/
IH
IuT
—
—
100
80
150
30
3
1.25
2.8
2
0,5
20
30
150
300
125
5
3.0
3.5
~
mAdc
mAdc
mAdc
mAdc
Vdc
Vdc
Vdc
Volts
jisec
Msec
jisec
V«t
0.15
VTM
t,;
T
—
"
Tc = +25°C, Anode supply = 24Vdc.
Initial forward current = 2 amps.
T,. = +25°C, Vn = 6Vdc, Ri. = 3 ohms.
T,- = -40°C, V
n
= 6Vdc, Ri, = 3 ohms.
T,- = + 125°C, Vn = 6 Vdc, Ri, = 3 ohms.
T
r
= -40°C to 0°C, Vn = 6 Vdc, R,, = 3 ohms,
T<- = 0°C to +125°C, V,, = 6 Vdc, R
T
. = 3 ohm».
Tr = 125°C, Vn»«, R,. = 1000 ohms.
Tr = +25°C, ITM = 500A peak.
Duty cycle £j .01%.
T,- = +25°C, IT = 50 Adc, V™*.
Gate supply: 10 volt open circuit, 20 ohm,
0.1
psec
max. rise time, ttt
Gate supply: 10 volt open circuit, 20 ohm,
1.0 jtsec max. rise time, ft, ttt
(1) To = +125°C, (2) IT = 150A.
(3) VK = 50 volts min.,
(4) VI.KM (reapplied),
(5) Rate of rise of reapplied forward
blocking voltage = 20 V/^sec (linear).
(6) Commutation di/dt = 5 Amps/^sec.
(7) Repetition rate = 1 pps.
(8) Gate bias during turn-oft"
interval = 0 volts, 100 ohms.
(1) Tc = +125°C, (2) IT = 150A,
(3) V» = 50 volts min.,
(4) VBHM (reapplied),
(5) Rate of rise of reapplied forward
blocking voltage = 200 V/jusec (linear).
(6) Commutation di/dt = 5 Amps/^sec.
(7) Repetition rate = 1 pps.
(8) Gate bias during turn-off
interval = 0 volts, 100 ohms.
(1) To = +125°C, (2) IT = 150A,
(3) V» = 1 volt (Forward drop of GE A96
rectifier diode at I
T
= 150A) ,
(4) V,,x«,
(5) Rate of rise of reapplied forward
blocking voltage = 200 V/^sec (linear) .
(6) Commutation di/dt = 5 Amps/Msec.
(7) Repetition rate — 1 pps.
(8) Gate bias during turn-off
interval = 0 volts, 100 ohms.
(1) Tc= -fl25°C, Vn*M (reapplied),
(2) Rate of rise of reapplied forward blocking
voltage = 200 V/MSCC (linear),
(3) Rep. rate = 400 Hz.,
(4) Gate supply = 20 volts, 80 ohms, 1.0 M»«C
max, rise time.
(5) IT = 500 A peak, t
p
= 3 /usec (half sine wave) ,
(6) VK = 50 volts min.
(1) Tc = +125°C, VHKM (reapplied),
(2) Rate of rise of reapplied forward blocking
voltage = 200 V/^sec (linear),
(3) Rep, Rate = 400 Hz..
(4) Gate supply = 20 volts, 80 ohms, 1.0 M»ec
max. rise time,
(5) IT — 500 A peak, t
p
= 3 ^sec (half sine wave) ,
(6) V» = 1 voltfForward drop of GE A96 rectifier
diode at IT = 150A).
Tr = + 25°C, IT = 50 Adc, Vmm,
tu
t,,
25
40
fisec
Conventional Circuit
Commutated
Turn-off-Time
(with Feedback Diode)
tu (i|i
llt
lr>
40
—t
Msec
Pulse Circuit
Commutated
Turn-Off-Time
(with Reverse Voltage)
tl| ( p u U « )
25
lisec
Pulse Circuit
Commutated
Turn-Off-Time
(with Feedback Diode)
tit ( | i u l l « >
40
_
1
.
l
. __A
jisec
(tlludt)
ttCMoy Tlmt may Incnat* ilgniflcanlly a« th« gat* driv* appraachtt th* I,:T of th* D*vlc* Und.r T*it (D.U.T.).
tttCurrtnt rlutim* at nwaiurcd with a currmt probe, or vorlogi riitrlmo acro» a non-lnductiv* r*tiit«r.
Quality Semi-Conductors
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