, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
DESCRIPTION
•With TO-220 package
•Complement to type D45C Series
•Very low collector saturation voltage
•Fast switching
APPLICATIONS
•Designed for various specific and
general purpose application
•Shunt and switching regulators
•Low and high frequency inverters
converters and etc.
PINNING
PIN
1
2
3
D44C Series
,,
1 2 3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220C) .nul symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
D44C1,2,3
D44C4,5,6
VCBO
Collector-base voltage
D44C7,8,9
D44C10,11,12
D44C1,2,3
D44C4,5,6
VCEO
Collector-emitter voltage
D44C7,8,9
D44C10,11,12
VEBO
Ic
ICM
IB
PD
T,
'stg
CONDITIONS
VALUE
40
55
UNIT
Open emitter
70
90
30
45
V
Open base
60
80
V
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Open collector
5
4
6
1
V
A
A
A
W
T
c
=25
30
150
-55-150
Qualiry Semi-Conductors
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
D44C2, 3,5,6,8,9,11, 12
VcEsa,
D44C Series
SYMBOL
CONDITIONS
l
c
=1A;l
B
=50mA
MIN
TYP.
MAX
UNIT
Collector-emitter
saturation voltage
D44C1,4,7,10
I
C
=1A;I
B
=0.1A
I
C
=1A;I
B
=0.1A
V
CE
=Rated V
CE
s;
V
EB
=5V; l
c
=0
40
0.5
V
VeEsat
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
D44C3,6,9,12
1.3
100
10
120
220
V
MA
MA
ICES
IEBO
hpE-1
DC current gain
D44C2, 5,8,11
D44C1,4,7,10
D44C1,4,7,10
lc=0.2A;V
C
E=1V
100
25
lc=1A;V
CE
=1V
lc=2A;V
C
E=1V
lc=20mA;V
C
E=4V;
f=1.0MHz
10
20
50
MHz
hFE-2
DC current gain
D44C2, 3, 5,6,8,9,11, 12
fr
Transition frequency
Switching times
tr
ts
Rise time
Storage time
Fall time
lc=1.0A;V
CC
=20V
I
B
1=-I
B
2=0.1A
0.3
0.7
0.4
MS
MS
us
tf
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