<^£.mL-donda<itoi ^Ptoaueti, LJnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
D44Q1/3/5
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: V
C
EO(sus)= 125V(Min>- D44Q1
= 175V(Min>- D44Q3
= 225V(Min>- D44Q5
• High Switching Speed
• Low Saturation Voltage
APPLICATIONS
• Designed for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C|
SYMBOL
PARAMETER
D44Q1
VCBO
Collector-Base Voltage
D44Q3
D44Q5
D44Q1
VCEO
Collector-Emitter Voltage
D44Q3
D44Q5
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25
:
C
Collector Power Dissipation
@ T
;1
=25
Junction Temperature
Storage Temperature Range
VALUE
UNIT
—
.-r
j
mm
^WN
3
PIN t.BASE
2. COLLECTOR
3 EMITTER
TO-220C package
-
»*Q
U 1
A
T
200
250
300
125
175
225
7
4
31.25
V
A
V
S
*
V
z
I
"«••
C
11 [rtf*
DIM
A
B
C
D
F
0
h
J
B •-
- V •-
F
*•
•« S
X
—75 o$
f
J
.
.
H lliMj-L
»
1
\-
J
L
ch
H
j
c r~
i
1
•1 R »
Ic
PC
PC
Tj
Tstg
mm
W
WIN
15.70
9.90
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2,90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
I.G7
150
-65-150
•c
"C
THERMAL CHARACTERISTICS
SYMBOL
Rthj-c
Rthj-a
PARAMETER
Thermal Resistance. Junction to Case
Thermal Resistance. Junction to Ambient
MAX
UNIT
4
75
;/w
:
1 /W
K
L
Q
R
S
U
V
Qualify Semi-Conductors
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T-=25'C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
D44Q1/3/5
TYP.
MAX
UNIT
D44QI
Collector-Emitter
Sustaining Voltage
D44Q3
125
175
V
VcEO(SUS)
lc= 10mA :I
B
= 0
D44Q5
I
C
=2A:I
B
=0.2A
225
VcE(sat)
Collector-Emitter Saturation Voltage
1.0
V
VsE(saD
Base-Emitter Saturation Voltage
D44QI
Collector
Cutoff Current
I
C
=2A:I
B
=0.2A
1.3
10
V
VCB= 200V:I
E
= 0
V
C
B=250V:I
E
=0
ICBO
D44O3
D44Q5
10
10
uA
VCB= 300V:I
E
= 0
30
hpE-1
DC Current Gain
l c = 0 . 2 A ; V c E = 10V
lc=2A :V
CE
= 10V
llFE-2
DC Current Gain
20
fr
Current-Gain — Bandwidth Product
Output Capacitance
lc=0.1A:V
C
E= 10V
l
E
=0:VcB= 10V: f= 1MHz
20
32
MHz
COB
PF
Switching Times
Delay Time
V
CC
= 50V
lc=1A:l
B
i=-l
B
2=0.1A
0.4
ton
uS
tstg
Storage Time
Fall Time
5
2.0
1.7
ys
,- s
tf
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