VMB80-28F datasheet, PDF - EEWORLD Datasheet

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VMB80-28F: DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4; CategoryDiscrete semiconductor The transistor; File Size17KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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VMB80-28F Overview

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4

VMB80-28F Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	9 A
Collector-based maximum capacity	200 pF
Collector-emitter maximum voltage	36 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	103 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

VMB80-28F Preview

VMB80-28F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI VMB80-28F

is Designed for

PACKAGE STYLE .380 4L FLG

B

.112 x 45°

A

Ø.125 NOM.

FULL R

J

.125

FEATURES:

•

Omnigold™

Metalization System

C

D

F

E

I

GH

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

O

9.0 A

65 V

36 V

4.0 V

103 W @ T

C

= 25

O

C

-65 C to +200 C

-65 C to +150 C

1.05

O

C/W

O

DIM

A

B

C

D

E

F

G

H

I

J

.240 / 6.10

.004 / 0.10

.085 / 2.16

.160 / 4.06

MINIMUM

inches / mm

MAXIMUM

inches / mm

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

ORDER CODE: ASI10748

CHARACTERISTICS

SYMBOL

BV

CEO

BV

CES

BV

EBO

I

CES

h

FE

C

OB

P

G

η

C

T

C

= 25 C

O

NONETEST

CONDITIONS

I

C

= 200 mA

I

C

= 200 mA

I

E

= 10 mA

V

CE

= 28 V

V

CE

= 5.0 V

V

CB

= 28 V

V

CC

= 28 V

P

OUT

= 80 W

I

C

= 500 mA

f = 1.0 MHz

f = 88 MHz

MINIMUM TYPICAL MAXIMUM

36

65

4.0

10

5.0

---

200

10

60

UNITS

V

mA

---

pF

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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