ne.
,O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
DESCRIPTION
• With TO-220 package
• Complement to type D44C Series
• Very low collector saturation voltage
• Fast switching
APPLICATIONS
• Designed for various specific and
general purpose application
• Shunt and switching regulators
• Low and high frequency inverters
converters and etc.
PINNING
PIN
I
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
D45C Series
DESCRIPTION
Emitter
Collectoi ^connected to
mounting base
Base
.I simplified outline (TO-220) and symbol
B C E
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
D45C1.2.3
D45C4.5.6
VCBO
D45C7.8.9
D45C10.1I.12
D45C 1.2.3
D45C4.5.6
VCEO
D45C7.8.9
D45C10.11. 12
VEBO
Ic
I CM
CONDITIONS
VALUE
-40
-55
UNIT
Open emitter
-70
-90
-30
-45
V
Open base
-60
-80
V
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Open collector
-5
-4
-6
.|
V
A
A
A
W
'(1
'(_
IB
PD
Tj
Tstg
T
c
=25t
30
150
-55-150
Quality Semi-Conductors
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 C unless otherwise specified
SYMBOL
PARAMETER
D45C2.3.5.6.8.9.11.12
D45C 1.4.7. 10
VeEsat
D45C Series
CONDITIONS
lc=-1A :l
B
-50mA
MIN
TYP.
MAX
UNIT
VcEsat
Collector-emitter
saturation voltage
-0.5
V
I
C
=.1A:I
B
-0.1A
I
C
-1A:I
B
-0.1A
V
C
E=Rated VCES
V
EB
^5V: l
c
=0
40
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
D45C2 3 5 6 8 9 11.12
-1.3
-100
-10
120
V
ICES
IEBO
M A
M A
hpE-1
DC current gain
D45C1.4.7.10
D45C1. 4.7.10
lc=-0.2A:V
C
E^1V
25
10
lc=-1A:V
C
E^1V
hFE-2
DC current gain
D45C2.5.8.11
D45C3.6.9.12
I
C
=-2A : V
C
E-1V
lc=-20mA:VcE-4V:
f= 1.0MHz
20
20
40
MHz
fr
Transition frequency
Switching times
tr
ts
Rise time
Storage time
Fall time
l
c
=-1.0A;Vcc=-20V
|
B1
=-|
B2
=-0.1A
0.2
0.6
0.3
P s
M S
t
f
ns
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