, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFF9130, IRFF9131
IRFF9132, IRFF9133
Avalanche-Energy-Rated
P-Channel Power MOSFETs
-5.5A and -6.5A, -60V and -100V
ros (on) = 0.30O and 0.40O
Features:
•
Single pulse avalanche energy rated
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
•
High input impedance
TERMINAL
DIAGRAM
D
«2CS-432««
P-CHANNEI. ENHANCEMENT MODE
The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are ad-
vanced power MOSFETs designed, tested, and guaranteed
to withstand a specified level of energy in the breakdown
avalanche mode of operation. These are p-channel enhance-
ment-mode silicon-gate power field-effect transistors de-
signed for applications such as switching regulators, switch-
ing converters, motor drivers, relay drivers, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power. These types can be operated
directly from integrated circuits.
The IRFF-types are supplied in the JEDEC TO-205AF
(LOW-PROFILE TO-39) metal package.
TERMINAL DESIGNATION
JEDEC TO-205AF
Absolute Maximum Ratings
Parameter
Vps
VQGR
'D @ TC = 25°C
loud
VQS
P
D
@
T
C " 25°C
t...
Tj
T
sly
Drain - Source Voltage (T)
Drain - Gate Voltage (Rfjs = 20 kD) ©
Continuous Drain Current
Pulsed Drain Current (D
Gate - Source Voltage
Max. Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy ®
Operating Junction and
Storage Temperature Range
Lead Temperature
IHFF9130
-100
100
IRFF9131
60
-60
IRFF9132
-100
100
5.5
22
±20
IRFF9133
-60
Un.ls
V
V
A
A
V
W
60
-6.5
26
-6.5
-26
-5.5
22
25
(See Fig.
141
0 2
(See Fig.
14!
500
w/°c
mj
°C
»C
55 to 150
300 (0.063 in. (1 .6mm) from case for 10s!
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
IRFF9130, IRFF9131, IRFF9132, IRFF9133
Electrical Characteristics @TQ = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
Type
IRFF9130
IRFF9132
IRFF9131
IRFF9133
Mm
100
-60
2.0
Typ.
Max
-
Units
Test Conditions
Drain - Source Breakdown Voltage
V
V
V
nA
nA
fA
*A
A
VGS *
ov
l
o
- -250,-A
V
DS
:
-
V
GS . ' D
-
-
40
-100
v
GS(th)
^
ate
Threshold Voltage
Gate
Source Leakage Forward
ALL
ALL
ALL
- -2SO..A
•CSS
'CSS
'OSS
VGS -- 2°
v
V
GS
-. 20V
V
DS
; Max. Rating. V
GS
V
DS
OV
OV, T
c
125°C
Gate ~ Source Leakage Reverse
Zero
100
-250
1000
^
ate
Voltage Dram Current
Max. Rating x 0.8. VGS
!
D(on)
On-State Dram Current ®
IRfF9130
IHFF9131
IRFF9132
IRFF9133
-6.S
-
-
0.25
-
-
0.30
V
DS
> 'Olonl *
R
DS[on) max -
V
GS
~ '
10V
-5.5
A
R
DS(on)
Static Drain - Source On-State
Resistance @
IRFF9130
IRFF9131
IRFF9132
IRFF9133
n
VGS
'v- 'D
> 'Dion) *
R
DS(on) max
<D -
-3-OA
-
2.5
-
0.30
0.40
0
S
<!!>
V
OS
9fs
Ciss
CQSS
Cfss
T
d(on)
Forward Transconductance <^)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate- Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain {"Miller") Charge
Internal Drain Inductance
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
3.5
500
300
10O
30
70
70
70
60
140
140
140
45
23
22
-
—
pF
PF
pf
ns
ns
ns
ns
nC
nC
nC
V
GS
" OV,
V
DS •
26V,
1 = 1 . 0
MHz
See Fig 1 0
V
DD
= 0.5 BV
D S S
. I
D
-
SeeF.g, 17
(MOSFET switching times are essentially
independent of operating temperature.)
VGS
a 15V
- 'D
= 1 5 A
-
V
DS
0.8V Max. Hating.
See Fig. 1 8 'or test circuit. (Gate charge is essentially
3 OA. Z
0
501.'
t
r
tdtoffl
t
f
O
g
-
25
13
12
50
Qgs
GWj
LQ
nH
Measured from the
dram lead, 5mm
(0.2 in.T from header
to center of die.
Modified MOSFET
symbol showing the
internal device
inductances.
0
LS
Internal Source Inductance
ALL
15
nH
Measured from the
(0-2 in.) from header
to source bonding
pad.
/ il
N^
i \e lead, 5mm
^*£/
GQ
JJ|"*^^ )
9
Thermal Resistance
R0jc
Htfj*
Junction-to-Case
Junction to-Ambient
ALL
All
-
b 0
1/5
•c/w
°C/W
Typica* socket mount
Source-Drain Diode Ratings and Characteristics
IS
Continuous Source Current
(Body DiodPl
IRFF9130
IRFF9131
IRFF9132
IRFF9133
'SM
Pulse Source Current
(Body Diode) (D
IRFF9130
IRFF9131
IRFF9132
IRFF9133
VSD
Diode Forward Voltage @
IRFF9130
IRFF9131
IRFF9132
1RFF9133
t
rr
QRR
'on
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn on Time
-
65
-5.5
A
A
A
A
V
V
ns
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.
i
l
1
-
-
-
-
-
-
-
300
-
18
-26
-22
-1 5
-1 5
-
-
(FT*
oo-l^-U
<
)
T
c
= 25°C, l
s J
6.5A. V
GS
= OV
T
C
- 25°C. I
S
= -5 5A. V
GS
= OV
Tj * 150°C 1
F
=
6.5A. dl
F
/dt = 10OA/
M
s
Tj . 150°C.lp
65A,dl
F
/dt = lOOA/^s
ALL
ALL
ALL
*c
Intrinsic turn-on time is negligible Turn on speed is substantially controlled by LS + Lp.
O Tj = 25°Cto 150"C.
<2 Pulse Test: Pulse width S SOO^is,
Duty Cycle < 2%,
(S Repetitive Rating: Pulse width limited
by max junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).
® Voo = 25V. starting Tj = 25°C. L 17.75 mH,
RG = 25O. Peak I
L
• 6.5A. (See Fig 15 and 16)
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