IRFF9133 datasheet, PDF - EEWORLD Datasheet

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IRFF9133: Description6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size683KB，2 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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IRFF9133 Overview

6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

IRFF9133 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
Reach Compliance Code	unknow

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, U

na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

IRFF9130, IRFF9131

IRFF9132, IRFF9133

Avalanche-Energy-Rated

P-Channel Power MOSFETs

-5.5A and -6.5A, -60V and -100V

ros (on) = 0.30O and 0.40O

Features:

•

Single pulse avalanche energy rated

•

SOA is power-dissipation limited

•

Nanosecond switching speeds

•

Linear transfer characteristics

•

High input impedance

TERMINAL

DIAGRAM

«2CS-432««

P-CHANNEI. ENHANCEMENT MODE

The IRFF9130, IRFF9131, IRFF9132 and IRFF9133 are ad-

vanced power MOSFETs designed, tested, and guaranteed

to withstand a specified level of energy in the breakdown

avalanche mode of operation. These are p-channel enhance-

ment-mode silicon-gate power field-effect transistors de-

signed for applications such as switching regulators, switch-

ing converters, motor drivers, relay drivers, and drivers for

high-power bipolar switching transistors requiring high

speed and low gate-drive power. These types can be operated

directly from integrated circuits.

The IRFF-types are supplied in the JEDEC TO-205AF

(LOW-PROFILE TO-39) metal package.

TERMINAL DESIGNATION

JEDEC TO-205AF

Absolute Maximum Ratings

Parameter

Vps

VQGR

'D @ TC = 25°C

loud

VQS

C " 25°C

t...

sly

Drain - Source Voltage (T)

Drain - Gate Voltage (Rfjs = 20 kD) ©

Continuous Drain Current

Pulsed Drain Current (D

Gate - Source Voltage

Max. Power Dissipation

Linear Derating Factor

Single Pulse Avalanche Energy ®

Operating Junction and

Storage Temperature Range

Lead Temperature

IHFF9130

-100

100

IRFF9131

-60

IRFF9132

-100

100

5.5

±20

IRFF9133

-60

Un.ls

-6.5

-26

-5.5

(See Fig.

141

0 2

(See Fig.

14!

500

w/°c

°C

»C

55 to 150

300 (0.063 in. (1 .6mm) from case for 10s!

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished b> N.I Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

\ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

IRFF9133 Related Products

	IRFF9133	IRFF9130	IRFF9131	IRFF9132
Description	6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF	6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF	6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF	6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
Reach Compliance Code	unknow	unknow	unknow	unknow
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	-

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