£/
j.ziis.1) <^>£.mi-L.onaiLctot L/-* 10 ducts., [inc.
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFZ44/45
IRFZ40/42
FEATURES
Lower
R
D
s (ON)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
N-CHANNEL
POWER MOSFETS
TO-220
Lower input capacitance
Extended safe operating area
Improved high temperature reliability
IRFZ44/IRFZ45
IRFZ40/IRFZ42
PRODUCT SUMMARY
Part Number
IRFZ44
IRFZ45
IRFZ40
IRFZ42
VDS
60V
60V
50V
Ros(on)
ID
35A
35A
35A
35A
0.028(1
0.035(1
00280
; 0035(1
50V
Current limited by wire 8 pin diameter
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Rcs=1 OM(1)(1)
Gate-Source Voltage
Continuous Drain Current Tc = 25°C
Continuous Drain Current Tc=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Single Pulsed Avalanche Energy (4)
Avalanche Current
Total Power Dissipation at Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
Notes:
(1)
(2)
(3)
(4)
IGM
EAS
IAS
Po
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
IRFZ44
60
60
IRFZ45
IRFZ40
50
5
0
± 20
IRFZ42
Unit
Vdc
Vdc
Vdc
35
35
210
35
33
190
±1
5
53
35
35
35
210
35
33
190
Adc
Adc
Adc
Adc
mj
A
1£
>0
1
2
Watts
W/°C
Tj. Tstg
T
L
-55 t 0 175°
3C 0
°C
°C
Tj=25°C to 175°C
Pulse test. Pulse width<300^s, Duty Cycle<2%
Repetitive rating: Pulse with limited by max junction temperature
L=50MH, V
d
d=25V. R
G
=25(1, Starting Tj=25°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placina orders.
Quality Semi-Conductors
IRFZ44/45
IRFZ40/42
N-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Symbol
BVoss
VGSIthI
Characteristic
Drain-Source Breakdown Voltage
IRFZ44/45
IRFZ40/42
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage Drain Current
On-State Drain-Source Current (2)
Static Drain-Source
On-State Resistance
IRFZ44/40
IRFZ45/42
Min
Typ
-
-
—
—
—
Max
Units
-
4.0
100
V
V
nA
Test Conditions
Vos=OV, b = 250MA
60
50
2.0
—
—
VOS=VGS, lo=250^A
VQs=20V
V
GS
=-20V
V
DS
=Max. Rating Vos=OV
Vos=0 8Max. Rating, V
GS
=OV. T
C
=150°C
V
DS
^1 2V VQS=10V
V
G
s=10V, I
D
=33A
loss
loss
loss
IDIOT)
RoS(on|
-100
nA
250
K*
1000
M
A
-
A
35
—
0.028
0.035
15
-
—
-
-
-
—
—
-
—
-
-
-
-
—
-
32
210
75
130
100
21
58
0
QIS
C,ss
Forward Transconductance (2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source Pulse Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge
u
pF
PF
PF
Vos^SOV, I
D
-33A
Vos=OV
V
D
s=25V
f= 1.0MHz
2450
740
360
—
-
—
-
-
—
-
COM
Crss
tfl(on|
t,
ns
ns
ns
ns
nC
nC
nC
V
G
s=10V, b = 52A, Vos = 0.8Max Rating
(Gate charge is essentially independent of
operating temperature )
(MOSFET switching times are essentially
independent of operating temperature)
td(oll)
tl
Q
fl
Qgs
Q
9
<j
THERMAL RESISTANCE
RthJC
Junction-to-Case
Case-to-Smk
Junction-to-Ambient
MAX
TYP
MAX
1.0
05
80
K/w
K.'W
Rthcs
RIUJA
Mounting surface flat
smooth, and greased
Free Air Operation
K/W
Notes:
(1) Tj = 25°C to 175°C
(2) Pulse test Pulse width<300ns. Duty Cycle<2%
(3) Repetitive rating Pulse width limited by max junction temperature
IRFZ44/45
IRFZ40/42
..-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Is
ISM
Characteristic
Continuous Source
Current (Body Diode)
Pulse-Source Current
(3)
IRFZ44/40
IRFZ45/42
Win
—
Typ
Max
3fa
35
_
—
-
210
190
2 5
250
Units
A
A
A
A
V
ns
Test Conditions
Modified MOSFET
integral reverse
P-N junction rectifier
IRFZ44/40 —
IRFZ45/42 |
—
«4°
VSD
trr
Diode Forward Voltage All
Reverse Recovery Time
T
C
=25°C, I
S
=35A, V
G
s=OV
T, = 25°C. I
F
= 35A, dl
F
/dt=100A/^S
Notes:
(1) Tj=25°C to 175°C
(2) Pulse test Pulse widthOOOys, Duty Cycle<2%
(3) Repetitive rating Pulse with limited by max junction temperature
6
12
18
24
30
36
10
12
14
VDS. DRAIN-TO SOURCE VOLTAGE (VOLTS)
Typical Output Characteristics
Vos, QATE-TO-SOURCE VOLTAGE (VOLTS)
Typical Transfer Characteristics
' OPERATfON hN THIS AflEA
0
"DSfon
0
g-
I
|
IRFZ4
4/40 -p»
r- _^ *
[ j^_
.-..
-
KSSS?
10'
-r^-*
I
-j
5
Z 4
4/40
t=
^H:
IRF,?
45
12 S
r
11
\1
^s"
1
\
:i||
1ms
^
; 1
->
i^
|L—
- -
| DC
1
05
1b
""15
20
25
VDS. DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5
10
5
10'
5
S, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
10'
Typical Saturation Characteristics
Maximum Safe Operating Area
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