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IRFZ45

Description
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size908KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

IRFZ45 Overview

50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRFZ45 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionTO-220, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current50 A
Rated avalanche energy100 mJ
Maximum drain on-resistance0.0280 ohm
Maximum leakage current pulse200 A
£/
j.ziis.1) <^>£.mi-L.onaiLctot L/-* 10 ducts., [inc.
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFZ44/45
IRFZ40/42
FEATURES
Lower
R
D
s (ON)
Improved inductive ruggedness
Fast switching times
Rugged polysilicon gate cell structure
N-CHANNEL
POWER MOSFETS
TO-220
Lower input capacitance
Extended safe operating area
Improved high temperature reliability
IRFZ44/IRFZ45
IRFZ40/IRFZ42
PRODUCT SUMMARY
Part Number
IRFZ44
IRFZ45
IRFZ40
IRFZ42
VDS
60V
60V
50V
Ros(on)
ID
35A
35A
35A
35A
0.028(1
0.035(1
00280
; 0035(1
50V
Current limited by wire 8 pin diameter
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Rcs=1 OM(1)(1)
Gate-Source Voltage
Continuous Drain Current Tc = 25°C
Continuous Drain Current Tc=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Single Pulsed Avalanche Energy (4)
Avalanche Current
Total Power Dissipation at Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, for Soldering
Purposes. 1/8" from case for 5 seconds
Notes:
(1)
(2)
(3)
(4)
IGM
EAS
IAS
Po
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
IRFZ44
60
60
IRFZ45
IRFZ40
50
5
0
± 20
IRFZ42
Unit
Vdc
Vdc
Vdc
35
35
210
35
33
190
±1
5
53
35
35
35
210
35
33
190
Adc
Adc
Adc
Adc
mj
A
>0
1
2
Watts
W/°C
Tj. Tstg
T
L
-55 t 0 175°
3C 0
°C
°C
Tj=25°C to 175°C
Pulse test. Pulse width<300^s, Duty Cycle<2%
Repetitive rating: Pulse with limited by max junction temperature
L=50MH, V
d
d=25V. R
G
=25(1, Starting Tj=25°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placina orders.
Quality Semi-Conductors

IRFZ45 Related Products

IRFZ45 IRFZ40 IRFZ42 IRFZ44
Description 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB POWER, FET POWER, FET
Maker - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor
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