., O
ne..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF710-713
MTP2N35/2N40
N-Channel Power MOSFETs,
2.25 A, 350-400 V
Power And Discrete Division
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid driver and high energy
pulse circuits.
Low
R
DS
(on)
V
GS
Rated at ±20 V
Silicon Gate for Fast Switching Speeds
IDSS, V
DS
(on). Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
Maximum Ratings
TO-220AB
IRF710
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
Rating
IRF710/712
MTP2N40
400
400
±20
-55 to
+150
275
Symbol
VDSS
VDQR
Characteristic
Drain to Source Voltage'
Drain to Gate Voltage'
R
QS
= 20 kO
Gate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Rating
IRF711/713
MTP2N35
350
350
±20
-55 to
+150
275
Unit
V
V
V
VGS
Tj.
T
s|
g
°c
°c
TL
Maximum On-State Characteristics
IRF710-711
RDS(on)
IRF712-713
5.0
MTP2N35/40
5.0
Unit
Static Drain-to-Source
On Resistance
Drain Current
Continuous at TC = 25°C
Continuous at T
c
= 100°C
Pulsed
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at T
c
= 25°C
3.6
n
A
b
1.5
1.0
6.0
1.4
0.9
5.0
1.3
0.8
5.0
Maximum Thermal Characteristics
Rftjc
RftJA
6.4
80
20
6.4
80
20
2.5
80
50
°C/W
"C/W
PD
W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF710-713
MTP2N35/2N40
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Off Characteristics
V
(BH)DSS
Characteristic
Win
Max
Unit
Test Conditions
Drain Source Breakdown Voltage
1
1RF710/712/MTP2N40
IRF711/713/MTP2N35
400
350
250
V
V
GS
= 0 V. ID = 250
uA
loss
Zero Gate Voltage Drain Current
MA
PA
nA
V
DS
= Rated V
DSS
, V
GS
= 0 V
VDS = 0.8 x Rated V
DS
s.
V
GS
= 0 V, T
C
-=125°C
V
GS
= ± 20 V, VDS = 0 V
1000
IGSS
Gate-Body Leakage Current
±500
On Characteristics
Vos(lh)
Gate Threshold Voltage
IRF710-713
MTP2N35/2N40
Static Drain-Source On-Resistance
2
IRF710/711
IRF71 2/71 3/MTP2N35/40
Drain-Source On-Voltage
2
MTP2N35/2N40
3.6
5.0
13
10
2.0
2.0
4.0
4.5
V
ID = 250 MA. VDS = V
GS
ID = 1 mA, V
DS
= V
GS
R
DS(on)
n
VGS = 10 V, ID
-0.8
A
V
DS(on)
V
V
VGS = 10 V, I
0
= 2.0 A
VGS = 10 V, ID- 1.0 A,
T
C
= 100°C
V
os
=• 10 V, I
D
- 0.8 A
Sis
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
0.5
s to)
200
50
15
PF
PF
pF
Dynamic Characteristics
Qss
V
DS
= 25 v. VGS = 0 V
( = 1.0 MHz
GOSS
C
rss
Switching Characteristics
(T
c
- 25°C, Figures
11, 12)
3
tdfon)
t.
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
10
20
10
15
7.5
ns
ns
ns
ns
nC
VDD = 200 V, ID = 0.8 A
VGS -10 V, R
QEN
= 50 H
R
QS
= 50 Ji
' td(oll)
tf
Q
9
VGS = 10 V, ID = 2.0 A
V
DD
= 200 V
IRF710-713
MTP2N35/2N40
Electrical Characteristics
(Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Diode Forward Voltage
IRF710/711
IRF712/713
1.6
1.5
380
V
V
ns
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
l
s
= 1 .5 A; V
GS
= 0 V
l
s
-1.3
A; V
es
= 0 V
tn-
Reverse Recovery Time
Is -1.5 A; dl
s
/dt = 25 A/f<S
Notes
1. Tj-+25°C to +150"C
2. Pulse lost: Pulse width < 80 ps. Duty cyde<1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Typical Performance Curves
Figure 1 Output Characteristics
Figure 2 Static Drain to Source Resistance
vs Drain Current
1>12S'C
0
0.6
V
M
-DHAIN
TO SOURCE
VOLTAG£-V
1.0
1.5
2.0
ID-DRAIN CURRENT-A
2.5
3.0
PCIIMCF
Figure 3 Transfer Characteristics
Figure 4 Temperature Variation of Gate to
Source Threshold Voltage
I-
K o..
3
£ o.«
?
tn
-SO
0
50
100
1
V(a—OAT8 TO
SOURCE VOLTAGE—V
V-JUNCTION TEMPERATUM-'C
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