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Datasheet> All Categories > Discrete semiconductor> The transistor> ITS60C06T
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ITS60C06T

Description
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size56KB，9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

ITS60C06T Overview

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel,

ITS60C06T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeTO-264AA
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)75 A
Collector-emitter maximum voltage600 V
Maximum landing time (tf)300 ns
Gate emitter threshold voltage maximum7.5 V
Gate-emitter maximum voltage20 V
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
surface mountNO

ITS60C06T Preview

ITS60C06
ITS60C06
Medium Frequency Powerline N-Channel IGBT
With Ultrafast Diode
DS4751 - 2.0 May 1999
The ITS60C06 is a robust n-channel, enhancement
mode insulated gate bipolar transistor (IGBT) designed for
low power dissipation in a wide range of high voltage
applications such as power supplies and motor drives. The
high impedance gate simplifies gate drive considerations,
allowing operation directly from low power control circuitry.
Fast rise and fall times allow very high frequency
switching making the device suitable for modern systems
employing high frequency switching.
Low saturation voltages minimise power dissipation,
thereby reducing the cost of the overall system in which
they are used.
The ITS is fully short circuit rated making it especially
suited for motor control and other applications requiring
short circuit with stand capacity. Each device in the
Powerline range is available with or without an integral
anti-parallel ultrafast soft recovery diode, see separate
datasheet for discrete device
Typical applications include high frequency inverters
for motor control, welding and heating apparatus. The
Powerline range of IGBTs is also applicable to switched
mode and uninterruptible power supplies.
KEY PARAMETERS
V
CES
V
CE(sat)
I
C25
I
C85
I
CM
t
sc
(max)
(typ)
(max)
(max)
(max)
(max)
600V
1.9V
75A
55A
120A
10
µ
s
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Outline type code: TO264
FEATURES
s
Enhancement Mode n-Channel Device
s
High Switching Speed
s
Low On-state Saturation Voltage
s
High Input Impedance Simplifies Gate Drive
s
Latch-Free Operation
s
Short Circuit Rated
s
Integral Fast Recovery Diode
(See Package Outline for further information)
Fig.1 Pin connections - top view (not to scale)
C
G
APPLICATIONS
s
High Frequency Inverters
s
Motor Control
s
Switched Mode Power Supplies
s
High Frequency Welding
s
Heating/Cooking Apparatus
E
Fig.2
ITS60C06
circuit
ORDERING INFORMATION
ITS60C06T
TO264 (with fast recovery diode)
1
ITS60C06
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25˚C unless stated otherwise.
Symbol
V
CES
V
GES
I
C25
I
C85
I
CM
P
tot
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Continuous collector current
Pulsed collector current
Power dissipation
T
case
= 25˚C
T
case
= 85˚C
1ms, T
case
= 85˚C
T
case
= 85˚C
V
GE
= 0V
-
Test Conditions
Max.
600
±20
75
55
120
155
Units
V
V
A
A
A
W
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(j-c)
T
OP
T
stg
-
Parameter
Thermal resistance - IGBT
Thermal resistance - Diode
Operating junction temperature range
Storage temperature range
Mounting torque
M3 screw
Conditions
DC junction to case
DC junction to case
-
-
Min.
-
-
–40
–40
-
Max.
0.42
-
150
150
1.1
Units
o
C/W
C/W
o
o
C
C
o
Nm
DC ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
=
±20V,
V
CE
= 0V
I
C
= 2mA, V
CE
= V
GE
V
GE
= 15V, I
C
= 55A
V
GE
= 15V, I
C
= 55A, T
j
= 125˚C
Min.
-
-
4
-
-
Typ.
-
-
6
1.9
2.1
Max.
1
±500
7.5
2.6
-
Units
mA
nA
V
V
V
2
ITS60C06
AC ELECTRICAL CHARACTERISTICS
T
case
= 25˚C unless stated otherwise.
Symbol
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Conditions
V
CE
= 25V, V
GE
= 15V, f = 1MHz
V
CE
= 25V, V
GE
= 15V, f = 1MHz
V
CE
= 25V, V
GE
= 15V, f = 1MHz
Min.
-
-
-
Typ.
4900
1300
1150
Max.
-
-
-
Units
pF
pF
pF
C
ies
C
oes
C
res
INDUCTIVE SWITCHING CHARACTERISTICS - see figures 3 to 5
T
case
= 25˚C unless stated otherwise.
Symbol
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Parameter
Turn-on delay time
Rise time
I
C
= 55A,
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
Turn-off energy loss - per cycle
V
GE
=
±15V,
V
CE
= 50%V
ces
R
G(ON)
= R
G(OFF)
= 25Ω
-
-
240
3.5
500
-
-
-
2.5
440
-
-
mJ
ns
ns
mJ
Conditions
Min.
-
-
Typ.
370
160
Max.
-
-
Units
ns
ns
T
case
= 125˚C unless stated otherwise.
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Turn-on delay time
Rise time
I
C
= 55A,
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
Turn-off energy loss - per cycle
V
GE
=
±15V,
V
CE
= 50%V
ces
R
G(ON)
= R
G(OFF)
= 25Ω
-
-
500
6
-
-
ns
mJ
-
-
3.9
490
-
-
mJ
ns
-
-
370
160
-
-
ns
ns
SHORT CIRCUIT RATING
Symbol
Parameter
Short circuit withstand time
Conditions
T
c
= 125˚C, V
GE
= 15V, V
CE
= 50% V
CES
Min.
-
Typ.
-
Max.
10
Units
µs
t
sc
3
ITS60C06
DIODE CHARACTERISTICS
T
c
= 25˚C unless stated otherwise.
Symbol
V
FM
Forward voltage
Parameter
Conditions
At I
F
= 55A peak
At I
F
= 55A peak, T
case
= 125˚C
t
rr
I
RRM
Reverse recovery time
Reverse recovery current
I
F
= 55A, di
RR
/dt = 200A/µs
V
R
= 50%V
RRM
Min.
-
-
-
-
Typ.
1.4
1.3
70
20
Max.
-
-
-
-
Units
V
V
ns
A
BASIC TEST CIRCUIT AND SWITCHING DEFINITIONS
V
CC
500µF
DUT
Fig.3 Basic d.c. chopper circuit
+15V
V
GE
0V
-15V
I
C
90%
10%
t
r
= t
3
- t
2
t
3
+ 1µs
1µs
t
d(on)
= t
2
- t
1
E
on
=
∫
V
CE
. I
C
dt
V
CE
t
1
t
2
t
3
t
4
t
1
Fig.4 Turn-on characteristics
4
ITS60C06
0V
-15V
V
GE
90%
1µs
I
C
V
CE
t
f
= t
7
- t
6
t
7
+ 1µs
10%
t
d(off)
= t
6
- t
5
E
off
=
∫
V
CE
. I
C
dt
t
5
t
5
t
6
t
7
t
8
Fig.5 Turn-off characteristics
CURVES
120
V
GE
= 15V
110
100
90
Collector-current, I
C
- (A)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
Collector-emitter voltage, V
CE
- (V)
5
T
case
= 25˚C
T
case
= 125˚C
120
V
CE
= 25V
110
100
90
T
case
= 125˚C
T
case
= 25˚C
Collector-current, I
C
- (A)
80
70
60
50
40
30
20
10
0
5
6
7
9
10
11
12
13
8
Gate-emitter voltage, V
GE
- (V)
14
15
Fig.6 Typical output characteristics
Fig.7 Typical transfer characteristics
5
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