MP6K13TR datasheet, PDF - EEWORLD Datasheet

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MP6K13TR: DescriptionPower Field-Effect Transistor, 6A I(D), 30V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，7 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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MP6K13TR Overview

Power Field-Effect Transistor, 6A I(D), 30V, 0.049ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

MP6K13TR Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.049 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F6
JESD-609 code	e2
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	2 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Copper (Sn/Cu)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON

MP6K13TR Preview

Data Sheet

4V Drive Nch + Nch MOSFET

MP6K13



Structure

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High power package(MPT6).

3) Low voltage drive(4V drive).



Dimensions

(Unit : mm)

MPT6

(Duel)

(6)

(5)

(4)

(1)

(2)

(3)



Application

Switching



Packaging specifications

Type

MP6K13

Package

Code

Basic ordering unit (pieces)

Taping

1000





Inner circuit

(6)

(5)

∗1

(4)

∗2



Absolute maximum ratings

(Ta = 25C)

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body Diode)

Power dissipation

Channel temperature

Range of storage temperature

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

Symbol

DSS

GSS

Limits

20

6.0

Unit

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗1

(1)

(2)

(3)

∗1

ESD PROTECTION DIODE

∗2

BODY DIODE

Continuous

Pulsed

Continuous

Pulsed

Tch

Tstg

12

1.6

2.0

W / TOTAL

1.4

W / ELEMENT

150

C

55

150

C

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MP6K13



Electrical characteristics

(Ta = 25C)

Parameter

Gatesource leakage

Drainsource breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drainsource onstate

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turnon delay time

Rise time

Turnoff delay time

Fall time

Total gate charge

Gatesource charge

Gatedrain charge

*Pulsed

Data Sheet

Symbol

GSS

(BR)DSS

DSS

GS (th)

DS (on)

Min.



1.0



3.5



Typ.



350

160

5.0

1.4

1.9

Max.

10



2.5



Unit

A

Conditions

=20V, V

=0V

=1mA, V

=0V

=30V, V

=0V

=10V, I

=1mA

=6.0A, V

=10V

m I

=6.0A, V

=4.5V

=6.0A, V

=4.0V

=6.0A, V

=10V

=0V

f=1MHz

=3.0A, V

15V

=10V

=5.0

=10

=6.0A, V

15V

=5V

l Y

l *

iss

oss

rss

d(on)

d(off)

Body

diode characteristics

(Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

*Pulsed

Symbol

Min.



Typ.



Max.

1.2

Unit

Conditions

Is=6.0A, V

=0V

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2011.03 - Rev.A

MP6K13

Electrical

characteristic curves

(Ta=25C)

Fig.1 Typical Output Characteristics(Ⅰ)

=25°C

Pulsed

DRAIN CURRENT : I

[A]

= 10V

= 4.5V

= 4.0V

Data Sheet

Fig.2 Typical Output Characteristics(Ⅱ)

=25°C

Pulsed

DRAIN CURRENT : I

[A]

= 10V

= 4.5V

= 4.0V

= 3.0V

= 2.5V

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : V

[V]

DRAIN-SOURCE VOLTAGE : V

[V]

Fig.3 Typical Transfer Characteristics

= 10V

Pulsed

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

(

)[mΩ]

= 125°C

= 75°C

= 25°C

25°C

1000

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

=25°C

Pulsed

= 4.0V

= 4.5V

= 10V

100

DRAIN CURRENT : I

[A]

0.1

0.01

0.001

GATE-SOURCE VOLTAGE : V

[V]

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

1000

= 10V

Pulsed

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

(

)[mΩ]

0.01

0.1

DRAIN-CURRENT : I

[A]

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅲ)

1000

= 4.5V

Pulsed

= 125°C

= 75°C

= 25°C

25°C

100

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

(

)[mΩ]

= 125°C

= 75°C

= 25°C

25°C

100

0.1

DRAIN-CURRENT : I

[A]

0.1

DRAIN-CURRENT : I

[A]

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MP6K13

Fig.8 Forward Transfer Admittance

vs. Drain Current

= 4.0V

Pulsed

= 125°C

= 75°C

= 25°C

25°C

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

= 10V

Pulsed

Data Sheet

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

1000

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

(

)[mΩ]

100

= 125°C

= 75°C

= 25°C

25°C

0.1

DRAIN-CURRENT : I

[A]

0.1

0.01

0.1

DRAIN-CURRENT : I

[A]

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

STATIC DRAIN-SOURCE ON-STATE

RESISTANCE : R

(

)[mΩ]

=0V

Pulsed

SOURCE CURRENT : Is [A]

100

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

=25°C

Pulsed

= 6.0A

= 3.0A

0.1

= 125°C

= 75°C

= 25°C

25°C

0.01

0.5

1.5

SOURCE-DRAIN VOLTAGE : V

[V]

GATE-SOURCE VOLTAGE : V

[V]

Fig.11 Switching Characteristics

1000

SWITCHING TIME : t [ns]

d(off)

100

=25°C

=15V

=10V

=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE : V

[V]

d(on)

=25°C

= 15V

= 6.0A

=10Ω

Pulsed

0.01

0.1

DRAIN-CURRENT : I

[A]

TOTAL GATE CHARGE : Qg [nC]

www.rohm.com

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MP6K13

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

Data Sheet

Fig.14 Maximum Safe Operating Aera

100

Operation in this area is limited by R

DS(ON)

=10V)

DRAIN CURRENT : I

(A)

10000

oss

CAPACITANCE : C [pF]

1000

iss

=100us

=1ms

= 10ms

rss

100

0.1

=25°C

f=1MHz

=0V

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : V

[V]

0.01

0.1

=25°C

Single Pulse : 1Unit

Mounted on a ceramic board.

(30mm

30mm

0.8mm)

DC operation

100

DRAIN-SOURCE VOLTAGE : V

[V]

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

=25°C

Single Pulse : 1Unit

NORMARIZED TRANSIENT THERMAL

RESISTANCE : r (t)

0.1

0.01

Mounted on a ceramic board.

(30mm

30mm

0.8mm)

Rth

(ch-a)

=89.3°C/W

Rth

(ch-a)

(t)=r(t)×Rth

(ch-a)

0.001

0.01

0.1

100

1000

0.001

0.0001

PULSE WIDTH : Pw(s)

www.rohm.com

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