EEWORLDEEWORLDEEWORLD

Part Number

Search

BAS16-T3

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size50KB,3 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric Compare View All

BAS16-T3 Online Shopping

Suppliers Part Number Price MOQ In stock  
BAS16-T3 - - View Buy Now

BAS16-T3 Overview

Rectifier Diode,

BAS16-T3 Parametric

Parameter NameAttribute value
MakerFORMOSA
Reach Compliance Codeunknown
ECCN codeEAR99
WTE
POWER SEMICONDUCTORS
BAS16
SURFACE MOUNT FAST SWITCHING DIODE
Features
!
!
!
High Conductance
A
L
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
!
For General Purpose and Switching
B
!
Plastic Material – UL Recognition Flammability
Classification 94V-O

TOP VIEW
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
SOT-23
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Max
0.51
1.40
2.50
1.05
0.61
2.05
3.05
0.15
1.10
0.61
0.178
Mechanical Data
!
!
!
!
!
!
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
Marking: A6
K
J
G
TOP VIEW
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t < 1.0µs
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
I
FSM
P
d
R
JA
T
j
, T
STG
Value
100
75
300
200
2.0
350
357
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Symbol
V
(BR)R
V
F
I
R
C
j
t
rr
Min
75
Max
0.855
1.0
2.0
6.0
Unit
V
V
µA
pF
nS
Test Condition
@ I
RS
= 100µA
@ I
F
= 10mA
@ V
R
= 75V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
RR
= 0.1 x I
R
, R
L
= 100
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
BAS16
1 of 3
© 2002 Won-Top Electronics

BAS16-T3 Related Products

BAS16-T3 BAS16-T1
Description Rectifier Diode, Rectifier Diode, 1 Element, 0.2A, 75V V(RRM),
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 891  2159  2431  2561  1212  18  44  49  52  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号