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70T633S15BF8

Description
CABGA-208, Reel
Categorystorage    storage   
File Size499KB,28 Pages
ManufacturerIDT (Integrated Device Technology)
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70T633S15BF8 Overview

CABGA-208, Reel

70T633S15BF8 Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeCABGA
package instruction15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-208
Contacts208
Manufacturer packaging codeBF208
Reach Compliance Codenot_compliant
ECCN code3A991
Maximum access time15 ns
I/O typeCOMMON
JESD-30 codeS-PBGA-B208
JESD-609 codee0
length15 mm
memory density9437184 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals208
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA208,17X17,32
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum standby current0.01 A
Minimum standby current2.4 V
Maximum slew rate0.305 mA
Maximum supply voltage (Vsup)2.6 V
Minimum supply voltage (Vsup)2.4 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
HIGH-SPEED 2.5V
512/256K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
70T633/1S
Features
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 10/12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T633/1 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full hardware support of semaphore signaling between
ports on-chip
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Supports JTAG features compliant to IEEE 1149.1 in
BGA-208 and BGA-256 packages
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 256-ball Ball Grid Array and 208-ball fine pitch
Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
512/256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
18L
(1)
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
18R
(1)
A
0R
TDI
OE
L
CE
0L
CE
1L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
TDO
JTAG
TCK
TMS
TRST
R/W
L
R/W
R
BUSY
L(2,3)
SEM
L
INT
L(3)
(4)
(4)
ZZ
L
ZZ
R
NOTES:
CONTROL
LOGIC
1. Address A
18
x is a NC for IDT70T631.
2.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
3
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INTx,
M/S and the
sleep mode pins themselves (ZZx) are not affected during sleep mode.
BUSY
R(2,3)
M/S
SEM
R
INT
R(3)
ZZ
5670 drw 01
AUGUST 2019
DSC-5670/11
1
©2019 Integrated Device Technology, Inc.

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