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DP5Z4MX16PJ3-12B

Description
Flash Module, 4MX16, 120ns, CQCC48, HERMETIC SEALED, CERAMIC, J LEADED, MODULE, SLCC-48
Categorystorage    storage   
File Size3MB,21 Pages
ManufacturerTwilight Technology Inc.
Download Datasheet Parametric View All

DP5Z4MX16PJ3-12B Overview

Flash Module, 4MX16, 120ns, CQCC48, HERMETIC SEALED, CERAMIC, J LEADED, MODULE, SLCC-48

DP5Z4MX16PJ3-12B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerTwilight Technology Inc.
Parts packaging codeLCC
package instructionAQCCJ, LDCC48,.51X.88
Contacts48
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time120 ns
Data pollingNO
JESD-30 codeR-CQCC-J48
memory density67108864 bit
Memory IC TypeFLASH MODULE
memory width16
Number of functions1
Number of departments/size64
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize4MX16
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeAQCCJ
Encapsulate equivalent codeLDCC48,.51X.88
Package shapeRECTANGULAR
Package formCHIP CARRIER, PIGGYBACK
page size64 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height10.3886 mm
Department size64K
Maximum standby current0.0008 A
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
4Mx16, 120 - 200ns, STACK/PGA
30A161-04
B
64 Megabit FLASH EEPROM
DP5Z4MX16Pn3
PRELIMINARY
DESCRIPTION:
The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory
subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip
Carriers (SLCC). Available unleaded, straight leaded, ‘’J’’ leaded, gullwing
leaded packages, or mounted on a 50-pin PGA co-fired ceramic substrate.
The Device packs 64-Megabits of FLASH EEPROM in an area as small as 0.463
in
2
, while maintaining a total height as low as 0.349 inches.
The DP5Z4MX16Pn3 contains four individual 2 Meg x 8 FLASH EEPROM
memory devices. Each SLCC is hermetically sealed making the module
suitable for commercial, industrial and military applications.
By using SLCCs, the ‘’Stack’’ family of modules offer a higher board density
of memory than available with conventional through-hole, surface mount or
hybrid techniques.
DP5Z4MX16PY3
DP5Z4MX16PI3
FEATURES:
Organization: 4Meg x 16
Fast Access Times: 120, 150, 200ns (max.)
Single 5.0 Volt
High-Density Symmetrically Blocked Architecture
- Sixteen 128 Kbyte Blocks Per Device
Extended Cycling Capability
- 100K Write/Erase Cycles
Automated Erase and Program Cycles
- Command User Interface
- Status Register
SRAM-Compatible Write Interface
Hardware Data Protection Feature
- Erase / Write Lockout during Power Transitions
Packages Available:
DP5Z4MX16PY
48 - Pin SLCC
DP5Z4MX16PI3
48 - Pin Straight Leaded SLCC
DP5Z4MX16PH3
48 - Pin Gullwing Leaded SLCC
DP5Z4MX16PJ3
48 - Pin ‘’J’’ Leaded SLCC
DP5Z4MX16PA3
50 - Pin PGA Dense-SLCC
DP5Z4MX16PJ3
DP5Z4MX16PA3
DP5Z4MX16PH3
30A161-04
REV. B
This document contains information on a product presently under
development at Dense-Pac Microsystems, Inc. Dense-Pac reserves the
right to change products or specifications herein without prior notice.
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