BAT19 datasheet, PDF - EEWORLD Datasheet

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BAT19: DescriptionSILICON, UHF BAND, MIXER DIODE, DO-35; CategoryDiscrete semiconductor diode; File Size61KB，3 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BAT19 Overview

SILICON, UHF BAND, MIXER DIODE, DO-35

BAT19 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	MATCHED BATCH AVAILABLE
Minimum breakdown voltage	10 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	1.2 pF
Diode component materials	SILICON
Diode type	MIXER DIODE
Maximum forward voltage (VF)	1 V
frequency band	ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
maximum noise index	6 dB
Number of components	1
Number of terminals	2
Maximum operating frequency	1 GHz
Minimum operating frequency	0.3 GHz
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	30 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse current	0.1 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL

BAT19 Preview

BAT 19

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION

Metal to silicon junction diode primarly intended for

UHF mixers and ultrafast switching applications.

Matched batches are available on request.

ABSOLUTE MAXIMUM RATINGS

(limiting values)

Symbol

RRM

FSM

stg

Parameter

Repetitive Peak Reverse Voltage

Forward Continuous Current*

Surge non Repetitive Forward Current*

Storage and Junction Temperature Range

Maximum Lead Temperature for Soldering during 10s at 4mm

f rom Case

= 25

°C

≤

DO 35

(Glass)

Value

- 65 to + 150

- 65 to + 125

230

Unit

°C

THERMAL RESISTANCE

Symbol

th(j-a)

Junction-ambient*

Test Conditions

Value

400

Unit

°C/W

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Symbol

(1)

amb

= 25°C

amb

= 25°C

amb

= 25°C

amb

= 25°C

Test Conditions

= 10µA

= 1mA

= 20mA

= 5V

Min.

0.4

0.1

µA

Typ.

Max.

Unit

DYNAMIC CHARACTERISTICS

Symbol

F (2)

amb

= 25°C

amb

= 25°C

amb

= 25°C

Test Conditions

= 0V

= 20mA

f = 1GHz

Krakauer Method

Min.

Typ.

Max.

1.2

100

Unit

* On infinite heatsink with 4mm lead length

(1) Pulse test: t

≤

300µs

δ <

2%.

(2) Noise figure test :

- diode is inserted in a tuned stripline circuit

- local oscillator frequency 1GHz

- local oscillator power 1mW

- intermediate frequency amplifier, tuned on 30MHz, has a noise figure 1.5dB

Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.

November 1994

1/3

BAT 19

Figure 1. Forward current versus forward

voltage at low level (typical values).

Figure 2. Capacitance C versus reverse

applied voltage V

(typical values).

Figure 3. Reverse current versus ambient

temperature.

Figure 4. Reverse current versus continuous

reverse voltage (typical values).

2/3

BAT 19

PACKAGE MECHANICAL DATA

DO 35 Glass

note 1 E

E note 1

note 2

DIMENSIONS

REF.

∅

Millimeters

Min.

3.050

12.7

1.530

0.458

2.000

0.558

1.27

Max.

4.500

Inches

Min.

0.120

0.500

0.060

0.018

Max.

0.117

NOTES

1 - The lead diameter

∅

D is not controlled over zone E

0.079

2 - The minimum axial lengh within which the device may be

0.022

placed with its leads bent at right angles is 0.59"(15 mm)

0.050

Cooling method : by convection and conduction

Marking: clear, ring at cathode end.

Weight: 0.15g

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands

Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.

3/3

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