2N3700HR
Datasheet
Rad-Hard 80 V, 1 A NPN transistor
3
4
3
Features
V
CEO
1
2
I
C
(max.)
1A
h
FE
at 10 V,
150 mA
> 100
T
j
(max.)
200 °C
1
2
80 V
LCC-3
UB
Pin 4 in UB is connected to the metallic lid.
•
•
•
Hermetic packages
ESCC and JANS qualified
Up to 100 krad(Si) low dose rate
C
(2)
B
(3)
Description
The
2N3700HR
is a silicon planar NPN transistor specifically designed and housed in
hermetic packages for aerospace and Rad-Hard applications. It is available in the
JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification
system (ESCC 5000 compliance). In case of discrepancies between this datasheet
and the relevant agency specification, the latter takes precedence.
DS10450
E
(1)
Product summary
Product summary
Device
Qualification
system
JANSR
JANS
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Agency
specification
MIL-PRF-19500/391
MIL-PRF-19500/391
5201/004
5201/004
5201/004
5201/004
Package
UB
UB
UB
UB
LCC-3
LCC-3
Radiation
level
100 krad
-
100 krad
-
100 krad
-
Product status link
2N3700HR
JANSR2N3700UBx
JANS2N3700UBx
2N3700RUBx
2N3700UBx
SOC3700RHRx
SOC3700HRx
DS6085
-
Rev 13
-
April 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
2N3700HR
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
ESCC
Total dissipation at T
amb
≤ 25 °C
LCC-3 and UB
LCC-3 and UB
(1)
JANS: UB
Total dissipation at T
SP(IS)
= 25 °C
T
STG
T
J
Storage temperature range
Max. operating junction temperature
JANS: UB
0.5
0.76
0.5
1.5
-65 to 200
200
W
°C
°C
W
Parameter
Value
140
80
7
1
Unit
V
V
V
A
P
TOT
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 2.
Thermal data
LCC-3
Symbol
R
thJSP(IS)
RthJA
Parameter
and UB
Value
90
325
240
(1)
°C/W
Unit
Thermal resistance junction-solder pad (infinite sink) (max) for JANS
Thermal resistance junction-ambient (max)
Thermal resistance junction-ambient (max) for ESCC
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
DS6085
-
Rev 13
page 2/18
2N3700HR
Electrical characteristics
2
Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the agency specification.
The electrical characteristics of each version are provided in dedicated tables.
2.1
JANS electrical characteristics
Table 3.
Electrical characteristics (T
amb
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
CES
Parameter
Collector-base cut-off current (I
E
= 0)
Collector-base cut-off current (I
E
= 0)
V
CB
= 140 V
V
CE
= 90 V
V
CE
= 90 V, T
amb
= 150 °C
V
EB
= 5 V
V
EB
= 7 V
I
C
= 30 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
h
FE
(1)
DC current gain
I
C
= 150 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V, T
amb
= -55 °C
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 10 V
h
fe
C
obo
C
ibo
Small signal current gain
Output capacitance, (I
E
= 0)
Input capacitance, (I
C
= 0)
I
C
= 1 mA, f = 1 kHz, V
CE
= 5 V
I
C
= 50 mA, f = 20 MHz, V
CE
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
CB
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
EB
= 0.5 V
V
CE
= 10 V, I
C
= 100 μA,
NF
Noise figure
R
g
= 1 kΩ, power bandwidth = 200 Hz,
f = 1khz
r'
b
,C
c
(2)
t
on
+ t
off
Collector-base time constant
Switching time
I
C
= 10 mA, V
CB
= 10 V, f = 79.8 MHz
see
Figure 5
400
30
ps
ns
4
dB
50
90
100
40
50
15
80
5
400
20
12
60
pF
pF
300
300
Test conditions
Min.
Max.
10
10
5
10
10
80
0.2
0.5
1.1
300
Unit
µA
nA
µA
nA
µA
V
V
V
V
I
EBO
Emitter-base cut-off current (I
C
= 0)
Collector-emitter breakdown voltage
(I
B
= 0)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
(BR)CEO
(1)
V
CE(sat)
(1)
V
BE(sat)
(1)
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
2. base terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf voltmeter across the emitter-base
terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies:r'b , Cc(ps) = 2 X Veb (mV).
DS6085
-
Rev 13
page 3/18
2N3700HR
ESCC electrical characteristics
2.2
ESCC electrical characteristics
Table 4.
Electrical characteristics (T
amb
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
EBO
V
(BR)CBO
Parameter
Collector-base cut-off current
(I
E
= 0)
Emitter cut-off current (I
C
= 0)
Collector-base breakdown
voltage
(I
E
= 0)
V
(BR)CEO
(1)
Collector-emitter breakdown
voltage
(I
B
= 0)
V
(BR)EBO
Emitter-base breakdown
voltage
(I
C
= 0)
V
CE(sat)
(1)
V
BE(sat)
(1)
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 10 mA, V
CE
= 10 V
h
FE
(1)
DC current gain
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V, T
amb
= -55 °C
h
fe
C
obo
C
ibo
Small signal current gain
Output capacitance (I
E
= 0)
Intput capacitance (I
C
= 0)
I
C
= 50 mA, f = 20 MHz, V
CE
= 10 V
f = 1 MHz, V
CB
= 10 V
f = 1 MHz, V
EB
= 0.5 V
90
100
50
40
5
12
60
pF
pF
300
0.2
0.5
1.1
V
V
I
E
= 100 µA
7
V
I
C
= 30 mA
80
V
V
CB
= 90 V
V
CB
= 90 V, T
amb
= 150 °C
V
EB
= 5 V
I
C
= 100 µA
140
Test conditions
Min.
Max.
10
10
10
Unit
nA
µA
nA
V
1. Pulsed duration = 300 µs, duty cycle > 2%
DS6085
-
Rev 13
page 4/18
2N3700HR
Electrical characteristics (curves)
2.3
Electrical characteristics (curves)
Figure 1.
DC current gain (V
CE
= 1 V)
hFE
V
CE
=1 V
110 °C
Figure 2.
DC current gain (V
CE
= 10 V)
hFE
V
CE
=10 V
110 °C
25 °C
-45 °C
25 °C
-45 °C
100
100
10
0.0001
0.001
0.01
Ic(A)
0.1
1
AM09680v1
10
0.0001
0.001
0.01
Ic(A)
0.1
1
AM09691v1
Figure 3.
Collector emitter saturation voltage
V
CE(sat)
h
FE
=10 V
110 °C
-40 °C
Figure 4.
Base emitter saturation voltage (h
FE
= 10)
V
BE(sat)
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
25 °C
0.05
0
0.01
0.1
Ic(A)
1
1.3
h
FE
=10 V
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0.7
0.65
0.6
0.01
-40 °C
25 °C
110 °C
0.1
Ic(A)
1
AM09693v1
AM09692v1
DS6085
-
Rev 13
page 5/18
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