BC146R datasheet, PDF - EEWORLD Datasheet

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BC146R: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size59KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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BC146R Overview

Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

BC146R Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

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, O

ne,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

BC146

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

MINIATURE NPN AF LOW NOISE

SILICON PLANAR EPITAXIAL TRANSISTOR

GENERAL DESCRIPTION

The BC 146 isaNPNsilicon planar epitaxial transistor

in miniature plastic package designed for hearing

aids, watches, paging systems and other equipment

where small size is of paramount importance. The

BC 146 is complementary to PNP BC 200.

ALL DIMENSIONS IN mm

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation atT

A

<4B°C

Junction Temperature

Storage Temperature Range

THERMAL RESISTANCE

Junction to Ambient

ELECTRICAL CHARACTERISTICS AT T

A

=25°C'

BC 146R

PARAMETER

Collector-Base Cutoff

Current

Collector-Emitter Knee

Voltage

Base-Emitter Voltage

DC Current Gain

Noise Figure

SYMBOL

'CBO

20V

' CEO

r

tot

20V

4V

50mA

SOmW

125°C

-65°Cto + 125°C

'stg

1.6°C/mW

BC 148Y

WIN

TYP

MAX

100

200

BC146G

MIN TYP MAX

100

200

WIN TYP

MAX

100

UNIT

nA

TEST CONDITIONS

VCB-ZOV

IE-O

'CBO

VCEK

200

mv

VBE

HFE

NF

570

630

570

630

570

630

mV

650

dB

80

100

120

1.5

200

140

220

1.5

360

4

280

380

1.5

Transition Frequency

Collector Capacitance

f

T

80

2.5

110

2.5

150

2.5

MHz

pF

lc»2mA

I

Q

- value

for which l

c

-2.2mA

andV

C

(=-1V

V

CE

-O.BV

l

c

-0.2mA

V

CE

-1V

Ig-SmA

V

CE

-0.5V

l

c

-0.2mA

VCE-1V

l

c

-2mA

VCE-BV

i

c

-o.2mA

R

g

-2Kn

f-30Hz-15KHz

VcE-BV

l

c

-2mA

VCB-BV

f-1MHz

I

E

-O

C

cb

TYPICAL h-PARAMETERS AT V

CE

=0.5V, l

c

=0.2mA, f=1KHz

PARAMETER

Input Impedance

Reverse Voltage Transfer Ratio

Small Signal Current Gain

Output Admittance

SYMBOL

h

ie

h

re

h

fe

h

oe

BC 146R

20

15

130

15

BC 146Y

30

25

240

20

BC146G

UNIT

45

40

400

35

<n

x10~*

M°

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

BC146R Related Products

	BC146R	BC146Y	BC146G
Description	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
Maker	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	140	280
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	110 MHz	150 MHz

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