EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFD112

Description
800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size851KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric Compare View All

IRFD112 Overview

800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

IRFD112 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.8 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T3
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec

IRFD112 Related Products

IRFD112 IRFD110 IRFD113 IRFD111
Description 800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 800mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
Reach Compliance Code unknown unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 80 V 80 V
Maximum drain current (ID) 0.8 A 1 A 0.8 A 1 A
Maximum drain-source on-resistance 0.8 Ω 0.6 Ω 0.8 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDIP-T3 R-PDIP-T3 R-PDIP-T3 R-PDIP-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
JESD-609 code e0 - e0 e0
Humidity sensitivity level NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Terminal surface TIN LEAD - TIN LEAD TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
How to display animation in Wince?
I use WTL to develop a wince 6.0 program. I would like to ask an expert how to display animations. Displaying pictures one by one is slow and consumes resources....
likyo Embedded System
Gaddafi tears off the mask of Sarkozy and the West
The title of an article in Spain's El Uprising on March 18: Gaddafi tears off the masks of Sarkozy and the West Gaddafi is currently doing two things: defeating the rebels who began to rise up in mid-...
熊猫 Talking
I encountered some problems with the 4-digit digital tube display. I'm a newbie, please help me!
#include #define uchar unsigned char #define uint unsigned int uchar code SMG[]={0x3F,0x06,0x5B,0x4F,0x66,0x6D,0x7D,0x07,0x7F,0x6F};/*0~9 numbers to be displayed*/ uchar code CTR[]={0xF8,0xF9,0xFA,0xF...
Darcy0 51mcu
I have been working in electronics for 2 years, and suddenly I feel a little confused.
I have been working in electronics for more than two years. I have worked in a company and also worked part-time outside to take orders. I feel that what I am doing is a bit chaotic and I can't find a...
li603672183 Talking
Recruitment: Software Engineer (Windows Mobile, WindowsCE, Embedded, C language)
The following positions are valid for a long time. If you are interested, please send your resume to (do not attach files, paste your resume at the end of the email): huawei.pda@gmail.com In addition,...
zhull1984 Embedded System
I took apart a 10-yuan generator flashlight, as shown above...
A real manual generator, quite creative:This has been disassembled. The main driving rod that drives the internal gear is on the left side of the gear:It actually uses a button battery, and has three ...
半导体狂人 Power technology

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 15  2638  814  436  1194  1  54  17  9  25 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号