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IRFD111

Description
1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size851KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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IRFD111 Overview

1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

IRFD111 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDIP-T3
JESD-609 codee0
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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IRFD111 Related Products

IRFD111 IRFD110 IRFD113 IRFD112
Description 1000mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 800mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 800mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Maker Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
Reach Compliance Code unknown unknown unknown unknown
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 80 V 100 V 80 V 100 V
Maximum drain current (ID) 1 A 1 A 0.8 A 0.8 A
Maximum drain-source on-resistance 0.6 Ω 0.6 Ω 0.8 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDIP-T3 R-PDIP-T3 R-PDIP-T3 R-PDIP-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
JESD-609 code e0 - e0 e0
Humidity sensitivity level NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Terminal surface TIN LEAD - TIN LEAD TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED

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