PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
TYPE: MTP4N80E
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25°C
°
Parameters
Symbol
Test Conditions
Drain Source
BVDSS I
D
= 250µA V
GS
= 0
Breakdown Voltage
Gate Threshold Voltage VGS(th) I
D
= 250µA V
DS
= V
G S
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
IGSS
IDSS
ID(on)
rDS(on)
gFS
VDS(on)
VDS(on)
Ciss
Coss
Crss
V
DS
= 25V V
GS
= 0
f = 1.0MH
Z
1320
187
72
2030
400
160
I
D
= 2.0A V
GS
= 10V
I
D
=2.0A V
DS
= 15V
I
D
= 4.0A V
GS
= 10V
I
D
= 2.0A V
GS
= 10V T
J
= 125ºC
2.0
1.95
4.3
8.24
12
10
3.0
V
GS
= ± 20V V
DS
= 0
V
DS
=800V V
GS
= 0
V
DS
= 800V V
GS
= 0 T
J
= 125ºC
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
800
800
4.0
12
±20
125
-55 to +150
260
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min
800
2.0
Typ
Max
Unit
Vdc
Vdc
nA
µA
Adc
Ohms
mhos
Vdc
Vdc
pF
pF
pF
3.0
4.0
100
10
100
Page 1 of 2
TYPE:
MTP4N80E
Drain Source Diode Characteristics
Forward On Voltage
I
S
= 4.0A V
GS
= 0
I
S
= 4.0A V
GS
= 0 T
J
= 125°C
Reverse Recovery Time
I
S
= 4.0A V
GS
= 0
dl
S
/dt = 100A/µs
Reverse Recovery Charge
Gate Charge
I
D
= 4.0A, V
DS
= 400V
V
GS
= 10V
Symbol
VSD
trr
ta
tb
QRR
QT
Q1
Q2
Q3
Min
Typ
0.812
0.7
557
100
457
2.33
36
7.0
16.5
12
80
Max
1.5
Units
Vdc
ns
ns
ns
µC
nc
nc
nc
nc
Switching Characteristics
Turn-On Time
Turn-Off Time
Delay Time (Turn On)
Rise Time
Delay Time (Turn Off)
Fall Time
I
D
= 4.0A V
DD
= 400V
R
g
= 9.1Ù
V
GS
= 10V
Symbol
ton
toff
td(on)
tr
td(off)
tf
Min
Typ
Max
Units
13
36
40
30
30
90
80
75
ns
ns
ns
ns
Thermal Characteristics
Junction To Case
Junction To Ambient
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Symbol
R
θJC
R
θJA
Symbol
Ld
Ls
Typ
3.5
7.5
1.0
63
Max
Units
°C/W
°C/W
Units
nH
nH
Page 2 of 2
京公网安备 11010802033920号
EEWORLD
