DG411HS/412HS/413HS
New Product
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
FEATURES
D
D
D
D
D
D
D
44-V Supply Max Rating
"15-V
Analog Signal Range
On-Resistance—r
DS(on)
: 25
W
Fast Switching—t
ON
: 68 ns
Ultra Low Power—P
D
: 0.35
mW
TTL, CMOS Compatible
Single Supply Capability
BENEFITS
D
D
D
D
Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
APPLICATIONS
D
D
D
D
D
Precision Automatic Test Equipment
Precision Data Acquisition
Communication Systems
Battery Powered Systems
Computer Peripherals
DESCRIPTION
The DG411HS series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35
mW)
with
high speed (t
ON
: 68 ns), the DG411HS family is ideally suited
for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411HS series was built on
Vishay Siliconix’s high voltage silicon gate process. An
epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks input voltages up to the supply levels when off.
The DG411HS and DG412HS respond to opposite control
logic as shown in the Truth Table. The DG413HS has two
normally open and two normally closed switches.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411HS
Dual-In-Line and SOIC
DG411HS
QFN16
D
1
IN
1
IN
2
D
2
DG411HS
LCC
D
1
IN
1
NC IN
2
D
2
Key
S
1
V-
NC
GND
S
4
4
5
6
7
8
9
10
11
12
13
3
2
1
20
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
V
L
S
3
D
3
IN
3
S
1
V-
GND
S
4
1
2
3
4
16
15
14
13
12
11
10
9
S
2
V+
V
L
S
3
5
6
7
8
D
4
IN
4
IN
3
D
3
Top View
D
4
IN
4
NC IN
3
D
3
Top View
TRUTH TABLE
Logic
0
1
DG411HS
ON
OFF
DG412HS
OFF
ON
Document Number: 72053
S-22064—Rev. A, 18-Nov-02
www.vishay.com
1
DG411HS/412HS/413HS
Vishay Siliconix
New Product
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG413HS
Dual-In-Line and SOIC
DG413HS
QFN16
D
1
IN
1
IN
2
D
2
IN
2
D
2
S
2
V+
V
L
S
3
D
3
5
IN
3
6
7
8
D
4
IN
4
IN
3
D
3
Top View
S
1
V-
GND
S
4
1
2
3
4
12
11
10
9
S
2
V+
NC
V
L
S
3
GND
S
4
Key
4
5
6
7
8
D
1
3
S
1
V-
DG413HS
LCC
IN
1
NC
2
1
IN
2
20
D
2
19
18
17
16
15
14
S
2
V+
NC
V
L
S
3
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
Top View
16
15
14
13
12
11
10
9
16
15
14
13
9
D
4
10
11
12
IN
3
13
D
3
IN
4
NC
Top View
TRUTH TABLE
Logic
0
1
SW
1
, SW
4
OFF
ON
SW
2
, SW
3
ON
OFF
ORDERING INFORMATION
Temp Range
Package
Part Number
DG411HS/412HS
DG411HSDJ
16-Pin Plastic DIP
-40 to 85_C
_
DG412HSDJ
DG411HSDY
16-Pin Narrow SOIC
DG412HSDY
DG411HSDN
16-Pin QFN 4x4mm
DG412HSDN
DG411HSAK, DG411HSAK/883
-55 to 125_C
16-Pin CerDIP
LCC-20
DG412HSAK, DG412HSAK/883
DG411HSAZ/883
DG413HS
16-Pin Plastic DIP
-40 to 85_C
85 C
16-Pin Narrow SOIC
16-Pin QFN 4x4mm
-55 to 125_C
_
16-Pin CerDIP
LCC-20
DG413HSDJ
DG413HSDY
DG413HSDN
DG413HSAK, DG413HSAK/883
www.vishay.com
2
Document Number: 72053
S-22064—Rev. A, 18-Nov-02
DG411HS/412HS/413HS
New Product
ABSOLUTE MAXIMUM RATINGS
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) +0.3 V
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D (Pulsed 1 ms, 10% Duty Cycle) . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, AZ Suffix) . . . . . . . . . . . . . . . -65 to 150_C
(DJ, DY, DN Suffix) . . . . . . . . . . . -65 to 125_C
16-Pin Narrow SOIC
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
16-Pin CerDIP
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
LCC-20
e
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
16-Pin (4x4mm) QFN
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 25_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
f.
Derate 23.5 mW/_C above 70_C
Vishay Siliconix
Power Dissipation (Package)
b
16-Pin Plastic DIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
SPECIFICATIONS
a
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Switch Off
Leakage Current
Channel On
Leakage Current
V
ANALOG
r
DS(on)
I
S(off)
I
D(off)
I
D(on)
V+ = 13.5 V, V - = -13.5 V
I
S
= -10 mA, V
D
=
"8.5
V
V+ = 16.5, V- = -16.5 V
V
D
=
"15.5
V, V
S
=
#15.5
V
V+ = 16.5 V, V - = -16.5 V
V
S
= V
D
=
"15.5
V
Full
Room
Full
Room
Full
Room
Full
Room
Full
25
"0.1
"0.1
"0.1
-0.25
-20
-0.25
-20
-0.4
-40
-15
15
35
45
0.25
20
0.25
20
0.4
40
-0.25
-5
-0.25
-5
-0.4
-10
-15
15
35
45
0.25
5
0.25
5
0.4
10
nA
V
W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V - = -15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Digital Control
Input Current, V
IN
Low
Input Current, V
IN
High
Input Capacitance
e
I
IL
I
IH
C
IN
V
IN
Under Test = 0.8 V
V
IN
Under Test = 2.4 V
f = 1 MhZ
Full
Full
Room
0.005
0.005
5
-0.5
-0.5
0.5
0.5
-0.5
-0.5
0.5
0.5
mA
m
pF
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off
Isolation
e
t
ON
t
OFF
t
D
Q
OIRR
X
TALK
C
S(off)
C
D(off)
C
D(on)
f = 1 MHz
R
L
= 300
W
, C
L
= 35 pF
V
S
=
"10
V See Figure 2
DG413HS Only, V
S
= 10 V
R
L
= 300
W
, C
L
= 35 pF
V
g
= 0 V, R
g
= 0
W
, C
L
= 1 nF
R
L
= 50
W
, C
L
= 5 pF,
f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
68
42
105
127
80
94
105
116
80
90
ns
20
22
-91
-88
12
12
30
pF
dB
pC
Channel-to-Channel Cross-
talk
e
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On
Capacitance
e
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
I
L
I
GND
Room
Full
V+ = 16.5, V- = -16.5 V
V
IN
= 0 or 5 V
Room
Full
Room
Full
Room
Full
0.0001
-0.0001
0.0001
-0.0001
-1
-5
-1
-5
1
5
-1
-5
www.vishay.com
1
5
-1
-5
1
5
1
5
mA
m
Document Number: 72053
S-22064—Rev. A, 18-Nov-02
3
DG411HS/412HS/413HS
Vishay Siliconix
New Product
SPECIFICATIONS
a
FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
V
ANALOG
r
DS(on)
V+ = 10.8 V, I
S
= -10 mA
V
D
= 3 V, 8 V
Full
Room
Full
49
12
80
100
12
80
100
V
W
A Suffix
-55 to 125_C
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V - = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t
ON
t
OFF
t
D
Q
R
L
= 300
W
, C
L
= 35 pF
V
S
= 8 V, See Figure 2
DG413HS Only, V
S
= 8 V,
R
L
= 300
W
, C
L
= 35 pF
V
g
= 6 V, R
g
= 0
W
, C
L
= 1 nF
Room
Hot
Room
Hot
Room
Room
95
36
140
180
70
79
140
160
70
74
ns
60
60
pC
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I-
V+ = 13.2, V
IN
= 0 or 5 V
I
L
I
GND
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
-0.0001
0.0001
-0.0001
-1
-5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
1
5
mA
m
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. V
D
and Dual Supply Voltage
65
rDS(on) - Drain-Source On-Resistance (W)
rDS(on) - Drain-Source On-Resistance (W)
T
A
= 25_C
55
"5
V
On-Resistance vs. V
D
and Unipolar Supply Voltage
300
V+ = 3.0 V
V
L
= 3 V
T
A
= 25
_C
V
L
= 5 V
250
45
"8
V
200
V+ = 5.0 V
35
"10
V
"12
V
"15
V
150
25
100
15
"20
V
V+ = 8.0 V
V+ = 12.0 V
V+ = 15.0 V
50
V+ = 20.0 V
0
2
4
6
8
10
12
14
16
18
20
5
-20
0
-15
-10
-5
0
5
10
15
20
V
D
- Drain Voltage (V)
V
D
- Drain Voltage (V)
www.vishay.com
4
Document Number: 72053
S-22064—Rev. A, 18-Nov-02
DG411HS/412HS/413HS
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
50
rDS(on) - Drain-Source On-Resistance (W)
V+ = +5 V
V - = -15 V
V
L
= 5 V
I
D(on)
I
S(off)
I
D(off)
-25
45
40
35
125_C
30
85_C
25
25_C
20
-55_C
15
10
5
-15
V+ = 15 V
V - = -15 V
V
L
= 5 V
Vishay Siliconix
On-Resistance vs. V
D
and Temperature
25
0
I
S
, I
D
(pA)
-50
-75
-100
-15
-10
-5
0
5
10
15
-10
V
D
or V
S
— Drain or Source Voltage (V)
-5
0
5
V
D
- Drain Voltage (V)
10
15
On-Resistance vs. V
D
and Temperature
75
rDS(on) - Drain-Source On-Resistance (W)
65
125_C
85_C
45
35
25
15
5
0
2
4
6
8
10
12
V
D
- Drain Voltage (V)
25_C
LOSS, OIRR, X
TLAK
(dB)
55
V+ = 12 V
V- = 0 V
V
L
= 5 V
0
-10
0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
100 K
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
LOSS
X
TALK
OIRR
V+ = 15 V
V - = -15 V
V
L
= 5 V
R
L
= 50
W
-55_C
1M
10 M
Frequency (Hz)
100 M
1G
Charge Injection vs. Analog Voltage
100
80
Q - Charge Injection (pC)
60
Q - Charge Injection (pC)
40
20
0
-20
-40
-60
-80
-100
-15
V =
$12
V
V =
$15
V
100
80
60
40
20
0
-20
-40
-60
-80
-100
-15
Charge Injection vs. Analog Voltage
V =
$15
V
V =
$12
V
-10
-5
0
5
10
15
-10
-5
0
5
10
15
V - Drain Voltage (V)
V
S
- Source Voltage (V)
Document Number: 72053
S-22064—Rev. A, 18-Nov-02
www.vishay.com
5
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