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T7031M-PEQ

Description
Support Circuit, 4 X 4 MM, MO-220, QFN-16
CategoryWireless rf/communication    Telecom circuit   
File Size137KB,6 Pages
ManufacturerAtmel (Microchip)
Download Datasheet Parametric View All

T7031M-PEQ Overview

Support Circuit, 4 X 4 MM, MO-220, QFN-16

T7031M-PEQ Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerAtmel (Microchip)
Parts packaging codeQFN
package instruction4 X 4 MM, MO-220, QFN-16
Contacts16
Reach Compliance Codecompliant
JESD-30 codeS-XQCC-N16
length4 mm
Humidity sensitivity level1
Number of functions1
Number of terminals16
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Package body materialUNSPECIFIED
encapsulated codeHVQCCN
Package shapeSQUARE
Package formCHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum seat height1 mm
Nominal supply voltage3.3 V
surface mountYES
Telecom integrated circuit typesSUPPORT CIRCUIT
Temperature levelCOMMERCIAL EXTENDED
Terminal formNO LEAD
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width4 mm

T7031M-PEQ Preview

Features
Frequency Range 2.4 GHz to 2.5 GHz
Linear P
out
18 dBm Typically
Gain 20 dB Typically
V
CC
from 2.7 V to 3.6 V
Package: HP-VFQFP-N16 (4
×
4 mm
2
)
Benefits
High Efficiency and Biasing Control Extends Battery Life Time
Reduction of Current Consumption by Power-down Mode
No External Components for Input Matching
Space Saving 4
×
4 mm
2
Package
Electrostatic sensitive device.
Observe precautions for handling.
2.4-GHz SiGe
Power Amplifier
for 802.11b
WLAN Systems
T7031
Preliminary
Description
Process
The 2.4-GHz power amplifier is designed in Atmel’s Silicon-Germanium (SiGe)
process and provides excellent noise performance, high gain as well as good power-
added efficiency.
Circuitry
The 802.11b PA consists of a two-stage amplifier with a linear output power of
18 dBm. The output stages were realized using an open-collector structure. The IC
features 50-W input matching. Power-up/down and biasing are controlled at the
Pin Vcontr. An integrated power detector provides a voltage proportional to the output
power.
Figure 1.
Block Diagram
V1_PA
V1_PA
PA_IN
Input
Matching
13
16
Vcc
15
14
1
Standby/
biasing
control
n.c.
12
SiGe PA
T7031
11
10
GND
GND
2
Vctrl
3
Interstage
Matching 4
5
V2_PA_Out
6
V2_PA_Out
7
V2_PA_Out
8
V2_PA_Out
Det.
V_DET_Out
Interstage
Matching
9
Rev. 4564A–WLAN–12/02
1
Pin Configuration
Figure 2.
Pinning HP-VFQFP-N16
V1_PA
V1_PA
PA_IN
IN_MATCH
Vcc
GND
Vctrl
INT_MATCH
1
2
3
4
16 15 14 13
12
T7031
11
10
Gnd on the Paddel
9
5 6 7 8
V2_PA_Out
V2_PA_Out
V2_PA_Out
V2_PA_Out
n.c.
GND
V_DET_Out
INT_MATCH
Pin Description
Pin
1
2
2
4
5
6
7
8
9
10
11
12
13
14
15
16
Slug
Symbol
Vcc
GND
Vctrl
INT_MATCH
V2_PA_Out
V2_PA_Out
V2_PA_Out
V2_PA_Out
INT_MATCH
V_DET_Out
GND
n.c.
IN_MATCH
PA_IN
V1_PA
V1_PA
Function
Supply voltage
Ground
Power-up/biasing control voltage
Interstage matching
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Power amplifier output and supply voltage for 2nd power amplifier stage
Interstage matching
Power detector output
Ground
Not connected
Input matching
Power amplifier input
Supply voltage for 1
st
power amplifier stage
Supply voltage for 1
st
power amplifier stage
Ground
2
T7031
4564A–WLAN–12/02
T7031
Absolute Maximum Ratings
Parameters
Supply voltage
Supply current
Junction temperature
Storage temperature
Input RF power
Control voltage power up/down and biasing
Symbol
V
CC
I
CC
T
j
T
Stg
Pin
Vcontr
Value
6
200
150
-40 to +125
12
0 to 3
Unit
V
mA
°C
°C
dBm
V
Thermal Resistance
Parameters
Junction ambient
Symbol
R
thJA
Value
35
Unit
K/W
Operating Range
Parameters
Supply voltage range
Ambient temperature range
Symbol
V
CC
T
amb
Value
2.7 to 3.6
-30 to +80
Unit
V
°C
Electrical Characteristics
No.
Parameters
Supply voltage
Frequency Range
P1dB output Power
Saturated output
power
Linear power gain
Current Consumption
Power added
efficiency
Adjacent channel
power rejection
2nd harmonic
Input 50
W
VSWR
Output 50
W
VSWR
Reverse isolation
With external
matching
On and off mode
P
out
= 18 dBm
Power-down mode
P
out
= 18 dBm
P
out
= 18 dBm
(2)
First side lobe
Second side lobe
P1dB
For reference
Test Conditions
Pin
Symbol
V
CC
f
P1dB
Psat
Gl
I
CC
I
pd
PAE
20
Min.
2.7
2400
23
24
20
90
15
Typ.
3.3
Max.
3.6
2500
Unit
V
MHz
dBm
dBm
dB
mA
µA
%
Type*
ACPR1
ACPR2
2fout
VSWRin
VSWRout
ISOr
-33
-55
-30
2:1
2:1
35
dBc
dBc
dBc
dB
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The current of the PA can be controlled by the Pin Vcontr. For lower output level demand, the current can be reduced.
2. With IEEE 802.11b conform modulation.
3
4564A–WLAN–12/02
Electrical Characteristics (Continued)
No.
Parameters
Control voltage range
Test Conditions
PA operating mode
(Biasing)
(1)
Power down
Power Detector
Maximum power
Minimum power
Settling time
Maximum voltage
PDETmax
PDETmin
tset
VDETmax
22
2
0.5
2
dBm
dBm
µs
V
Pin
Symbol
Vcontr
Vcontr
Min.
1
Typ.
Max.
2
0.2
Unit
V
V
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. The current of the PA can be controlled by the Pin Vcontr. For lower output level demand, the current can be reduced.
2. With IEEE 802.11b conform modulation.
Figure 3.
Application Circuit
Vcc
V1_PA
PA_IN
*
*
16
15
14
13
1
Standby/
biasing
control
n.c.
12
SiGe PA
T7031
11
V_DET_Out
Det.
2
Vctrl
3
*
4
10
*
9
5
6
7
8
V2_PA
PA_Out
*
* microstrip Line
4
T7031
4564A–WLAN–12/02
T7031
Ordering Information
Extended Type Number
Package
Remarks
MOQ
T7031M-PEP
T7031M-PEQ
HP-VFQFP-N16
HP-VFQFP-N16
Taped and reeled
Taped and reeled
1500
6000
Package Information
5
4564A–WLAN–12/02
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