The CY62128B is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE
1
),
an active HIGH Chip Enable (CE
2
), an active LOW Output
Enable (OE), and three-state drivers. This device has an
automatic power-down feature that reduces power
consumption by more than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable
One (CE
1
) and Write Enable (WE) inputs LOW and Chip
Enable Two (CE
2
) input HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
The CY62128B is available in a standard 450-mil-wide SOIC,
32-pin TSOP type I and STSOP packages.
•
•
•
•
Logic Block Diagram
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
A8
ROW DECODER
I/O 0
I/O 1
SENSE AMPS
I/O 2
I/O 3
I/O 4
I/O 5
POWER
DOWN
512x 256x 8
ARRAY
CE1
CE2
WE
OE
COLUMN
DECODER
I/O 6
I/O 7
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
Cypress Semiconductor Corporation
Document #: 38-05300 Rev. *C
•
3901 North First Street
•
San Jose
,
CA 95134
•
408-943-2600
Revised March 7, 2005
CY62128B
MoBL
®
Product Portfolio
Power Dissipation
V
CC
Range (V)
Product
CY62128BLL
Industrial
Industrial
Automotive
Min.
4.5
Typ.
[2]
5.0
Max.
5.5
Speed
(ns)
55
70
70
Operating, I
CC
(mA)
Typ.
[2]
7.5
6
6
Max.
20
15
25
Standby, I
SB2
(µA)
Typ.
[2]
2.5
2.5
2.5
Max.
15
15
25
Pin Configurations
Top View
SOIC
1
2
3
4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O
0 13
I/O
1 14
I/O
2 15
GN
G
ND 16
g
gnc
G
NC
A16
A14
A12
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
CE
2
WE
A13
A8
A9
A11
OE
A10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
16
A
12
A
14
A
7
A
4
A
5
A
6
V
CC
NC
A
15
CE
2
WE
A
13
A
8
A
9
A
11
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Reverse TSOP I
Top View
(not to scale)
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A
3
A
11
A
2
A
9
A
1
A
8
A
13
A
0
I/O
0
WE
I/O
1
CE
2
A
15
I/O
2
GND V
CC
NC
I/O
3
A
16
I/O
4
A
14
I/O
5
A
12
I/O
6
A
7
I/O
7
A
6
CE
1
A
5
A
10
A
4
OE
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
STSOP
Top View
(not to scale)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP I
Top View
(not to scale)
32
31
30
29
28
27
26
25
25
24
23
22
21
20
19
18
17
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
Pin Definitions
Input
Input/Output
Input/Control
Input/Control
Input/Control
Input/Control
Ground
Power Supply
A
0
-A
16
. Address Inputs
I/O
0
-I/O
7
. Data lines. Used as input or output lines depending on operation
WE.
Write Enable, Active LOW. When selected LOW, a WRITE is conducted. When selected HIGH, a READ
is conducted.
CE
1
. Chip Enable 1, Active LOW.
CE
2
. Chip Enable 2, Active HIGH.
OE.
Output Enable, Active LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins
GND.
Ground for the device
V
CC
. Power supply for the device
Note:
2. Typical values are included for reference only and are not tested or guaranteed. Typical values are an average of the distribution across normal production
variations as measured at V
CC
= 5.0V, T
A
= 25°C, and t
AA
= 70 ns.
Document #: 38-05300 Rev. *C
Page 2 of 11
CY62128B
MoBL
®
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input
Voltage
[3]
.................................–0.5V
to V
CC
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
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