BC846B-T datasheet, PDF - EEWORLD Datasheet

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BC846B-T: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size76KB，2 Pages; ManufacturerRectron Semiconductor; Websitehttp://www.rectron.com/; Environmental Compliance

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BC846B-T Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN

BC846B-T Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC846

BC847

BC848

NPN Silicon Planar Epitaxial Transistors

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

3

1

2

Unit: inch (mm)

SOT-23 SMD Package

Absolute Maximum Ratings

(Ta = 25

o

C unless specified otherwise)

DESCRIPTION

Collector Base Voltage

Collector Emmitter Voltage (V

BE

= 0V)

Collector Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Current - Peak

Emitter Current - Peak

Base Current - Peak

Total power dissipation up to

T

amb

= 25

o

C

Storge Temperature

Junction Temperature

Thermal Resistance

From junction to ambient

SYMBOL

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

CM

-I

EM

I

BM

P

tot

**

Tstg

Tj

R

th(j-a)**

BC846

80

65

6

BC847

50

45

6

100

200

250

-55 to +150

150

500

BC848

30

5

UNITS

V

mA

mW

o

C

K/W

**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm

www.rectron.com

1 of 2

BC846B-T Related Products

	BC846B-T	BC847B	BC846A-T
Description	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, SMD, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMD, 3 PIN
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	65 V	45 V	65 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200	110
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265	265	265
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Maker	Rectron Semiconductor	Rectron Semiconductor	-
Base Number Matches	-	1	1

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