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KBL10-E3

Description
DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size99KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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KBL10-E3 Overview

DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode

KBL10-E3 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PSIP-W4
Contacts4
Manufacturer packaging codeCASE KBL
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-W4
JESD-609 codee4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceSILVER
Terminal formWIRE
Terminal locationSINGLE

KBL10-E3 Preview

KBL005 thru KBL10
Vishay General Semiconductor
Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 V
RMS
e4
~
~
~
Case Style KBL
~
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, SMPS, adapter,
audio equipment, and home appliances applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
4A
50 V to 1000 V
200 A
5 µA
1.1 V
150 °C
MECHANICAL DATA
Case:
KBL
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward current at T
A
= 50 °C
Peak forward surge current single sine-wave
superimposed on rated load
Operating junction and storage temperature range
SYMBOL KBL005 KBL01
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
50
35
50
100
70
100
KBL02
200
140
200
KBL04
400
280
400
4.0
200
- 50 to + 150
KBL06
600
420
600
KBL08
800
560
800
KBL10
1000
700
1000
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward drop per diode
Maximum DC reverse
current at rated DC
blocking voltage per diode
TEST CONDITIONS
4.0 A
T
A
= 25 °C
T
A
= 125 °C
SYMBOL KBL005 KBL01
V
F
KBL02
KBL04
1.1
5.0
1.0
KBL06
KBL08
KBL10
UNIT
V
µA
mA
I
R
Document Number: 88655
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
KBL005 thru KBL10
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes:
(1) Thermal resistance from junction to ambient with units mounted on 3.0 x 3.0 x 0.11" thick (7.5 x 7.5 x 0.3 cm) aluminum plate
(2) Thermal resistance from junction to lead with units mounted on P.C.B. at 0.375" (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads
SYMBOL KBL005 KBL01
R
θJA
R
θJL
KBL02
KBL04
19
(1)
2.4
(2)
KBL06
KBL08
KBL10
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
KBL06-E4/51
UNIT WEIGHT (g)
6.0
PREFERRED PACKAGE CODE
51
BASE QUANTITY
300
DELIVERY MODE
Anti-static PVC tray
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4.0
100
Heatsink Mounted
3.0" sq. x 0.06" Thickness
(7.5 x 0.15 cm) Copper Plate
3.0
Instantaneous Forward Current (A)
Average Forward Current (A)
10
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
1
2.0
1.0
P.C.B. Mounting
0.375" (9.5 mm) Lead Length
60 Hz Resistive or Inductive Load
0
0
50
100
150
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Temperature (°C)
Instantaneous Forward
Voltage
(V)
Figure 1. Derating Curve Output Rectified Current
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
200
10
T
J
= 150 °C
Single Sine-Wave
175
150
125
100
75
50
1.0 Cycle
25
1
10
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
100
0
20
40
60
80
100
Number
of Cycles at 60 Hz
Percent of Rated Peak Reverse
Voltage
(%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88655
Revision: 15-Apr-08
KBL005 thru KBL10
Vishay General Semiconductor
250
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
200
150
100
50
0
0.1
1
10
100
Reverse
Voltage
(V)
Figure 5. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style KBL
0.768 (19.5)
0.726 (18.5)
0.640 (16.3)
0.600 (15.2)
0.591 (15.0)
0.567 (14.4)
1.1
(27.9)
MIN.
1.0
(25.4)
MIN.
0.210 (5.33)
0.190 (4.83)
0.052 (1.3) DIA.
0.048 (1.2) TYP.
0.256 (6.5)
0.236 (6.0)
0.091 (2.30)
0.077 (1.95)
Document Number: 88655
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1

KBL10-E3 Related Products

KBL10-E3 KBL08E4 KBL01-E3 KBL08-E4
Description DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode DIODE 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode DIODE 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE KBL, 4 PIN, Bridge Rectifier Diode
Maker Vishay Vishay Vishay Vishay
package instruction R-PSIP-W4 LEAD FREE, PLASTIC, CASE KBL, 4 PIN R-PSIP-W4 R-PSIP-W4
Contacts 4 4 4 4
Manufacturer packaging code CASE KBL CASE KBL CASE KBL CASE KBL
Reach Compliance Code unknown unknown unknown unknown
Other features UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 1000 V - 100 V 800 V
Shell connection ISOLATED - ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSIP-W4 - R-PSIP-W4 R-PSIP-W4
JESD-609 code e4 - e4 e4
Maximum non-repetitive peak forward current 200 A - 200 A 200 A
Number of components 4 - 4 4
Phase 1 - 1 1
Number of terminals 4 - 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C
Minimum operating temperature -50 °C - -50 °C -50 °C
Maximum output current 4 A - 4 A 4 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form IN-LINE - IN-LINE IN-LINE
Certification status Not Qualified - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V - 100 V 800 V
surface mount NO - NO NO
Terminal surface SILVER - SILVER Silver (Ag)
Terminal form WIRE - WIRE WIRE
Terminal location SINGLE - SINGLE SINGLE

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