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BSS7728

Description
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BSS7728 Overview

Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSS7728 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
s
Power Semiconductors
MOS Transistors
IGBTs
Duo-Packs
FREDs
Fast IGBTs
S-FET
SO-8
D-PAK
I-PAK
Product Information 04. 98
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Index Files: 1800  902  531  70  1879  37  19  11  2  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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