Ordering number : ENA0890
TF218THC
SANYO Semiconductors
DATA SHEET
TF218THC
Features
•
•
•
•
•
•
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Halogen free compliance.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Marking: A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907GB TI IM TC-00000868 No. A0890-1/5
TF218THC
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
GV
∆G
VV
∆Gvf
ZIN
ZO
THD
VNO
IG=-
-100µA
VDS=5V, ID=1µA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
VIN=10mV, f=1kHz
VIN=10mV, f=1kHz, VCC=4.5→1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
VIN=30mV, f=1kHz
VIN=0V, A curve
25
1000
1.2
--110
Conditions
Ratings
min
--20
--0.2
140*
0.5
1.0
3.5
0.65
--3.0
--1.2
--3.5
--1.0
--0.6
--1.0
350*
typ
max
Unit
V
V
µA
mS
pF
pF
dB
dB
dB
MΩ
Ω
%
dB
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
* : The TF218THC is classified by IDSS as follows : (unit :
µA)
Rank
IDSS
4
140 to 240
5
210 to 350
Package Dimensions
unit : mm (typ)
7031-001
Top View
1.4
0.2
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
0.25
1kΩ
3
1.2
0.8
15pF
33µF
+
VCC=4.5V
VCC=1.5V
1
0.2
2
0.2
0.45
0.34
0.1
VTVM V
OSC
THD
B A
Output Impedance
Bottom View
0.07
0.07
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
500
450
400
ID -- VDS
500
450
400
ID -- VDS
Drain Current, ID --
µA
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
Drain Current, ID --
µA
350
300
250
200
VGS=0V
VGS=0V
--0.1V
--0.1V
150
100
50
0
0
1
2
3
--0.2V
--0.3V
--0.4V
7
8
--0.2V
--0.5V
9
10
IT02310
--0.3V
--0.4V
4
--0.5V
5
IT03015
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
No. A0890-2/5
TF218THC
500
450
400
ID -- VGS
VDS=5V
400
360
320
ID -- VGS
VDS=5V
Drain Current, ID --
µA
350
300
250
200
150
100
50
0
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
Drain Current, ID --
µA
280
240
200
160
120
80
40
0
--1.0
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--2
5
°
C
--0.2
--0.1
=3
SS
ID
µ
A
50
2
A
0
µ
15
Ta
=
75
°
C
25
°
C
µ
50
A
--0
Gate-to-Source Voltage, VGS -- V
1.3
IT02312
-0.70
-0.65
yfs
-- IDSS
Gate-to-Source Voltage, VGS -- V
IT02313
VGS(off) -- IDSS
Forward Transfer Admittance,
y
fs -- mS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
Cutoff Voltage, VGS(off) -- V
VDS=5V
VGS=0V
f=1kHz
VDS=5V
ID=1µA
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
100
200
300
400
Drain Current, IDSS --
µA
100
500
IT02314
120
0
100
200
300
400
THD -- VIN
Drain Current, IDSS --
µA
500
IT02315
PD -- Ta
Allowable Power Dissipation, PD -- mW
Total Harmonic Distortion, THD -- %
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
10
100
250
µ
A
150
µ
A
I DSS=
350
µ
A
80
60
1.0
40
20
0.1
0
50
100
150
200
IT02316
0
0
20
40
60
80
100
120
140
160
Input Voltage, VIN -- mV
2
Ambient Temperature, Ta --
°C
5
IT02317
Ciss -- VDS
Reverse Transfer Capacitance, Crss -- pF
VGS=0V
f=1MHz
Crss -- VDS
VGS=0V
f=1MHz
3
2
Input Capacitance, Ciss -- pF
10
7
5
1.0
7
5
3
2
3
2
1.0
7
1.0
2
3
5
7
10
2
3
0.1
7
1.0
2
3
5
7
10
2
3
Drain-to-Source Voltage, VDS -- V
IT03814
Drain-to-Source Voltage, VDS -- V
IT03815
No. A0890-3/5
TF218THC
GV : VCC=4.5V
VIN=10mV
RL=1.0kΩ
f=1kHz
IDSS : VDS=5.0V
Reduced Voltage Characteristic,
∆G
VV -- dB
0
GV -- IDSS
--0.5
∆G
VV -- IDSS
∆G
VV : VCC=4.5V→1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--1
--0.7
Voltage Gain, GV -- dB
--2
--0.9
--3
--1.1
--4
--1.3
--5
--6
--7
0
100
200
300
400
--1.5
--1.7
0
100
200
300
400
Drain Current, IDSS --
µA
2.5
500
IT02320
32
THD -- IDSS
Drain Current, IDSS --
µA
500
IT02321
ZIN -- IDSS
Total Harmonic Distortion, THD -- %
Input Impedance, ZIN -- MΩ
2.0
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
31
ZIN :VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
30
1.5
29
1.0
28
0.5
27
0
0
100
200
300
400
26
Drain Current, IDSS --
µA
960
500
IT02322
--111
0
100
200
300
400
ZO -- IDSS
Drain Current, IDSS --
µA
500
IT02323
VNO -- IDSS
950
Output Noise Voltage, VNO -- dB
Output Impedance, ZO --
Ω
ZO : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
--112
--113
--114
--115
--116
--117
--118
--119
VNO : VCC=4.5V
VIN=0V, ACurve
RL=1.0kΩ
IDSS : VDS=5.0V
940
930
920
910
900
0
100
200
300
400
--120
Drain Current, IDSS --
µA
500
IT02324
0
100
200
300
400
Drain Current, IDSS --
µA
500
IT02325
No. A0890-4/5
TF218THC
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0890-5/5
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