CPW3-0600S004
–Silicon Carbide Schottky Diode Chip
Z-R
ec
R
ectifieR
TM
V
RRM
= 600 V
I
F(AVG)
= 4 A
Features
•
•
•
•
•
•
•
600-Volt Schottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Swtitching
Positive Temperature Coefficient on V
F
Chip Outline
Q
c
= 8.5 nC
Part Number
CPW3-0600S004B
Anode
Al
Cathode
NiV/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
Maximum Ratings
Symbol
V
RRM
V
RSM
V
DC
Parameter
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Operating Junction and Storage Temperature
Value Unit
600
600
600
4
22
110
-55 to
+175
V
V
V
A
A
A
˚C
T
J
=175˚C
Test Conditions
Note
0S004 Rev. A
et: CPW3-060
Datashe
I
F(AVG)
I
FRM
I
FSM
T
J
, T
stg
T
C
=25˚C, t
P
=10 ms, Half Sine Wave, D=0.3
T
C
=25˚C, t
P
=10 µs, Pulse
1
1
Subject to change without notice.
www.cree.com/power
1
Electrical Characteristics
Symbol
V
F
I
R
Q
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Typ.
1.5
1.8
10
20
8.5
251
22
21
Max.
1.8
2.4
50
100
Unit
V
μA
nC
Test Conditions
I
F
= 4 A T
J
=25°C
I
F
= 4 A T
J
=175°C
V
R
= 600 V T
J
=25°C
V
R
= 600 V T
J
=175°C
V
R
= 600 V, I
F
= 4 A
di/dt = 500 A/μs
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
Note
C
Total Capacitance
pF
Note:
1.
Assumes
θJC
Thermal Resistance of 2.02˚C/W
or less
Mechanical Parameters
Parameter
Die Size
Anode Pad Size
Anode Pad Opening
Thickness
Wafer Size
Anode Metalization (Al)
Cathode Metalization (NiV/Ag)
Frontside Passivation
Typ.
1.13 x 1.13
0.98 x 0.99
0.87 x 0.88
377 ± 10%
100
4
1.8
Polyimide
Unit
mm
mm
mm
μm
mm
μm
μm
2
CPW3-0600S004 Rev. A
Chip Dimensions
A
symbol
B
A
dimension
mm
inch
0.044
0.039
0.039
1.13
0.98
0.99
A
B
C
C
B
Part Number
CPW3-0600S004B
Anode
Al
Cathode
NiV/Ag
Package
Sawn on Foil
Marking
Wafer # on Foil
The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due
to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These
die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend
that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2
– 3 weeks of delivery to assure 100% release of all die without issues.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems.
Copyright © 2009-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
3
CPW3-0600S004 Rev. A
Microcontroller MCU
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