DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B
UHF wideband transistor
Preliminary specification
2001 Jan 18
Philips Semiconductors
Preliminary specification
UHF wideband transistor
FEATURES
•
Small size
•
Low noise
•
Low distortion
•
High gain
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Communication and instrumentation systems.
DESCRIPTION
1
2
MSB003
PBR941B
PINNING SOT23
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
Top view
Marking code:
LBp
Fig.1 Simplified outline (SOT23).
QUICK REFERENCE DATA
SYMBOL
C
re
f
T
G
UM
NF
P
tot
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
T
s
= 60
°C;
note 1
MIN.
−
7
−
−
−
−
TYP.
0.3
9
16
1.5
−
−
MAX.
−
−
−
2.5
360
320
UNIT
pF
GHz
dB
dB
mW
K/W
2001 Jan 18
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−
PBR941B
MAX.
20
10
1.5
50
50
360
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
320
UNIT
K/W
2001 Jan 18
3
Philips Semiconductors
Preliminary specification
UHF wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
BEF
I
CBO
I
EBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I
C
= 100
µA;
I
E
= 0
I
C
= 100
µA;
I
B
= 0
I
E
= 10
µA;
I
C
= 0
I
E
= 25 mA
V
CB
= 10 V; I
E
= 0
V
EB
= 1 V; I
C
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C
= 15 mA; V
CE
= 6 V
AC characteristics
C
re
f
T
|s
21
|
2
G
UM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
NF
noise figure
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
Note
−
7
13
−
−
−
−
0.3
9
15
16
10
1.5
2.1
20
10
1.5
−
−
−
100
−
−
−
−
−
−
−
150
150
PARAMETER
CONDITIONS
MIN.
TYP.
PBR941B
MAX.
−
−
−
1.05
100
100
200
−
−
−
−
−
−
2.5
−
UNIT
V
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
s
21 2
-
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
=
10 log ------------------------------------------------------- dB
(
1
–
s
11 2
) (
1
–
s
22 2
)
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, halfpage
400
MDA871
handbook, halfpage
160
MCD974
Ptot
(mW)
300
hFE
120
200
70
100
40
0
0
50
100
150
Ts (°C)
200
0
0
10
20
30
40
50
IC (mA)
V
CE
= 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
DC current gain as a function of collector
current; typical values.
MGS498
handbook, halfpage
0.5
Cre
handbook, halfpage
10
MCD975
(pF)
0.4
fT
(GHz)
8
0.3
6
0.2
4
0.1
2
0
0
4
8
VCB (V)
12
0
0
10
20
30
40
50
IC (mA)
I
C
= I
c
= 0; f = 1 MHz.
V
CE
= 6 V; f
m
= 1 GHz; T
amb
= 25
°
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
2001 Jan 18
5
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