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PBR941BTRL

Description
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size150KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
Download Datasheet Parametric Compare View All

PBR941BTRL Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, BIP RF Small Signal

PBR941BTRL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz

PBR941BTRL Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B
UHF wideband transistor
Preliminary specification
2001 Jan 18
Philips Semiconductors
Preliminary specification
UHF wideband transistor
FEATURES
Small size
Low noise
Low distortion
High gain
Gold metallization ensures excellent reliability.
APPLICATIONS
Communication and instrumentation systems.
DESCRIPTION
1
2
MSB003
PBR941B
PINNING SOT23
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
Top view
Marking code:
LBp
Fig.1 Simplified outline (SOT23).
QUICK REFERENCE DATA
SYMBOL
C
re
f
T
G
UM
NF
P
tot
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
T
s
= 60
°C;
note 1
MIN.
7
TYP.
0.3
9
16
1.5
MAX.
2.5
360
320
UNIT
pF
GHz
dB
dB
mW
K/W
2001 Jan 18
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
open emitter
open base
open collector
CONDITIONS
MIN.
−65
PBR941B
MAX.
20
10
1.5
50
50
360
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
320
UNIT
K/W
2001 Jan 18
3
Philips Semiconductors
Preliminary specification
UHF wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
BEF
I
CBO
I
EBO
h
FE
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
I
C
= 100
µA;
I
E
= 0
I
C
= 100
µA;
I
B
= 0
I
E
= 10
µA;
I
C
= 0
I
E
= 25 mA
V
CB
= 10 V; I
E
= 0
V
EB
= 1 V; I
C
= 0
I
C
= 5 mA; V
CE
= 6 V
I
C
= 15 mA; V
CE
= 6 V
AC characteristics
C
re
f
T
|s
21
|
2
G
UM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 6 V; f
m
= 1 GHz
I
C
= 15 mA; V
CE
= 6 V; f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 6 V;
T
amb
= 25
°C;
f = 2 GHz
NF
noise figure
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
Γ
S
=
Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
Note
7
13
0.3
9
15
16
10
1.5
2.1
20
10
1.5
100
150
150
PARAMETER
CONDITIONS
MIN.
TYP.
PBR941B
MAX.
1.05
100
100
200
2.5
UNIT
V
V
V
V
nA
nA
pF
GHz
dB
dB
dB
dB
dB
s
21 2
-
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero. G
UM
=
10 log ------------------------------------------------------- dB
(
1
s
11 2
) (
1
s
22 2
)
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, halfpage
400
MDA871
handbook, halfpage
160
MCD974
Ptot
(mW)
300
hFE
120
200
70
100
40
0
0
50
100
150
Ts (°C)
200
0
0
10
20
30
40
50
IC (mA)
V
CE
= 6 V.
Fig.2
Power derating as a function of soldering
point temperature.
Fig.3
DC current gain as a function of collector
current; typical values.
MGS498
handbook, halfpage
0.5
Cre
handbook, halfpage
10
MCD975
(pF)
0.4
fT
(GHz)
8
0.3
6
0.2
4
0.1
2
0
0
4
8
VCB (V)
12
0
0
10
20
30
40
50
IC (mA)
I
C
= I
c
= 0; f = 1 MHz.
V
CE
= 6 V; f
m
= 1 GHz; T
amb
= 25
°
C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
2001 Jan 18
5

PBR941BTRL Related Products

PBR941BTRL 934056631215 PBR941BTRL13
Description TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST, 3 PIN, BIP RF Small Signal TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, BIP RF Small Signal
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN Tin (Sn) TIN
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 30 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 9000 MHz 9000 MHz 9000 MHz
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