BCW69 datasheet, PDF - EEWORLD Datasheet

BCW69: DescriptionSILICON PLANAR EPITAXIAL TRANSISTORS; File Size214KB，4 Pages; ManufacturerCDIL; Websitehttp://www.cdilsemi.com

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SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SOT-23 Formed SMD Package

BCW69

BCW70

SILICON PLANAR EPITAXIAL TRANSISTORS

P–N–P transistors

Marking

BCW69 = H1

BCW70 = H2

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

BCW69

BCW70

D.C. current gain at T

= 25 °C

–I

= 2 mA; –V

CE =

5 V

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Collector current (peak value)

Total power dissipation up to T

amb

= 25 °C

Junction temperature

Transition frequency at f = 35 MHz

–I

= 10 mA; –V

= 5 V

Noise figure at R

= 2 kΩ

–I

= 200

A; –V

CE =

5 V;

f = 1 kHz; B = 200 Hz

120

260

–V

CB0

max.

–V

CE0

max.

–I

max.

tot

max.

typ.

215

500

200

250

150

°C

MHz

Continental Device India Limited

Data Sheet

Page 1 of 4

BCW69 Related Products

	BCW69	BCW70
Description	SILICON PLANAR EPITAXIAL TRANSISTORS	SILICON PLANAR EPITAXIAL TRANSISTORS

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