PD - 95129A
Features
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IRF3205ZPbF
IRF3205ZSPbF
IRF3205ZLPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 6.5mΩ
G
S
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
D
= 75A
TO-220AB
IRF3205ZPbF
D
2
Pak
TO-262
IRF3205ZSPbF IRF3205ZLPbF
Max.
110
78
75
440
170
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
1.1
± 20
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
Units
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
d
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ã
h
180
250
See Fig.12a, 12b, 15, 16
g
i
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
y
y
Typ.
Max.
0.90
–––
62
40
Units
°C/W
i
i
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
j
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1
07/23/10
IRF3205ZS/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
71
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.051
4.9
–––
–––
–––
–––
–––
–––
76
21
30
18
95
45
67
4.5
7.5
3450
550
310
1940
430
640
–––
–––
6.5
4.0
–––
20
250
200
-200
110
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 66A
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 66A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 66A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 66A
R
G
= 6.8
Ω
V
GS
= 10V
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
28
25
75
A
440
1.3
42
38
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 66A, V
GS
= 0V
T
J
= 25°C, I
F
= 66A, V
DD
= 25V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3205ZS/LPbF
1000
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
V
GS
1000
TOP
V
GS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
4.5V
100
10
1
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
4.5V
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(
A)
T J = 25°C
T J = 175°C
100
T J = 175°C
100
80
60
40
20
0
T J = 25°C
10
1
4.0
5.0
6.0
7.0
VDS = 25V
20µs PULSE WIDTH
8.0
9.0
10.0
11.0
VDS = 10V
20µs PULSE WIDTH
0
20
40
60
80
100
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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IRF3205ZS/LPbF
6000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
VGS, Gate-to-Source Voltage (V)
ID= 66A
VDS= 44V
VDS= 28V
VDS= 11V
5000
16
C, Capacitance (pF)
4000
Ciss
12
3000
8
2000
4
1000
Coss
Crss
0
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
10.0
T J = 25°C
1.0
1
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
2.2
0.1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF3205ZS/LPbF
120
100
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
LIMITED BY PACKAGE
ID = 66A
VGS = 10V
2.0
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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