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IRF3707STRRPBF

Description
High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
CategoryDiscrete semiconductor    The transistor   
File Size281KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRF3707STRRPBF Overview

High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

IRF3707STRRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionLEAD FREE, PLASTIC, D2PAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)213 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)62 A
Maximum drain-source on-resistance0.0125 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)248 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD -95528
SMPS MOSFET
Applications
l
IRF3707PbF
IRF3707SPbF
IRF3707LPbF
HEXFET
®
Power MOSFET
l
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
V
DSS
30V
R
DS(on)
max
12.5mΩ
I
D
62A
Benefits
l
Ultra-Low Gate Impedance
l
l
Very Low R
DS(on)
Fully Characterized Avalanche Voltage
and Current
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Maximum Power Dissipation
ƒ
Maximum Power Dissipation
ƒ
Linear Derating Factor
Junction and Storage Temperature Range
TO-220AB
IRF3707
D
2
Pak
IRF3707S
TO-262
IRF3707L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
T
J
, T
STG
Max.
30
± 20
62
52
248
87
61
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
„
Junction-to-Ambient
„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
Max.
1.73
–––
62
40
Units
°C/W
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes

through
„
are on page 10
www.irf.com
1
7/20/04
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