Preliminary Technical Information
HiperFET
TM
Power MOSFET
Q3-Class
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
IXFR80N50Q3
V
DSS
I
D25
R
DS(on)
t
rr
=
=
≤
≤
500V
50A
72mΩ
Ω
250ns
ISOPLUS247
E153432
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
V
ISOL
F
C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
50
240
80
5
50
570
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.5..27
5
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
V∼
N/lb.
g
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
V
GS
= 10V, I
D
= 40A, Note 1
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
3.5
6.5
V
V
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
G = Gate
S = Source
D
= Drain
G
D
S
Isolated
Tab
±200
nA
50
μA
2 mA
72 mΩ
© 2011 IXYS CORPORATION, All Rights Reserved
DS100323A(06/11)
IXFR80N50Q3
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 40A
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 40A
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 40A, Note 1
Characteristic Values
Min.
Typ.
Max.
35
55
10
1260
115
0.15
30
20
43
15
200
77
90
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.22
°C/W
°C/W
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXFR) Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 40A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.8
15.6
Characteristic Values
Min.
Typ.
Max.
80
320
1.4
A
A
V
250 ns
μC
A
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFR80N50Q3
Fig. 1. Output Characteristics @ T
J
= 25ºC
80
V
GS
= 10V
70
60
9V
160
140
120
180
V
GS
= 10V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
50
40
30
20
10
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
100
80
60
40
20
9V
8V
8V
7V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
80
70
60
V
GS
= 10V
9V
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
6V
0
0
2
4
6
8
10
12
0.2
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 40A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
- Amperes
50
40
30
20
10
8V
I
D
= 80A
I
D
= 40A
7V
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Value vs.
Drain Current
3.0
2.8
2.6
V
GS
= 10V
T
J
= 125ºC
45
40
55
50
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.4
I
D
- Amperes
T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
35
30
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFR80N50Q3
Fig. 7. Input Admittance
120
100
T
J
= - 40ºC
100
80
25ºC
60
125ºC
Fig. 8. Transconductance
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
60
g
f s
- Siemens
8.0
8.5
9.0
9.5
10.0
80
40
40
20
20
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
0
20
40
60
80
100
120
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240
16
V
DS
= 250V
14
200
12
160
I
D
= 40A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
120
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
10
8
6
80
4
40
2
0
0
0
40
80
120
160
200
240
280
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
f
= 1 MHz
Capacitance - PicoFarads
Ciss
10,000
100
100µs
I
D
- Amperes
1,000
Coss
10
100
Crss
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1ms
10
0
5
10
15
20
25
30
35
40
0.1
10
100
1,000
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFR80N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z
(th)JC
- ºC / W
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N50Q3(Q8) 6-20-11-C
Embedded System
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