PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTP 1R4N60P
IXTU 1R4N60P
IXTY 1R4N60P
V
DSS
I
D25
R
DS(on)
= 600
= 1.4
≤
9.0
V
A
Ω
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 20
Ω
T
C
= 25° C
Maximum Ratings
600
600
±30
±40
1.4
2.1
1.4
5
75
10
50
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°
C
°
C
g
g
g
TO-220 (IXTP)
G
D
(TAB)
S
TO-251 (IXTU)
G
D
S
(TAB)
TO-252 (IXTY)
1.6 mm (0.062) from case for 10 s
Plastic body for 10 s
TO-220
TO-252
TO-251
300
260
4.0
0.35
0.4
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 25
µA
V
DS
= V
GS
, I
D
= 25
µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
±50
1
20
9.0
V
V
nA
µA
µA
Ω
Features
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
Easy to mount
Space savings
High power density
DS99253E(10/05)
© 2006 IXYS All rights reserved
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
0.7
1.1
140
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
17
2.4
10
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
=0.5 I
D25
R
G
= 50
Ω
(External)
16
25
16
5.2
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
1.34
5.2
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
2.5
°
C/W
(TO-220)
(TO-251)
0.25
1.0
°
C/W
°
C/W
Pins: 1 - Gate
3 - Source
2,4 - Drain
TO-220 (IXTP) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
1.4
4
1.5
500
A
A
V
ns
TO-252 AA (IXTY) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 1.5 A, -di/dt =100 A/µs
V
R
=100 V, V
GS
= 0 V
TO-251 (IXTU) Outline
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
1.
2.
3.
4.
Gate
Drain
Source
Drain
Millimeter
Min.
Max.
2.19
0.89
0.64
0.76
5.21
0.46
0.46
5.97
6.35
2.28
4.57
17.02
8.89
1.91
0.89
2.38
1.14
0.89
1.14
5.46
0.58
0.58
6.22
6.73
BSC
BSC
17.78
9.65
2.28
1.27
Inches
Min. Max.
.086
0.35
.025
.030
.205
.018
.018
.235
.250
.090
.180
.670
.350
.075
.035
.094
.045
.035
.045
.215
.023
.023
.245
.265
BSC
BSC
.700
.380
.090
.050
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
Millimeter
Min. Max.
2.19
0.89
0
0.64
0.76
5.21
0.46
0.46
5.97
4.32
6.35
4.32
2.38
1.14
0.13
0.89
1.14
5.46
0.58
0.58
6.22
5.21
6.73
5.21
Inches
Min.
0.086
0.035
0
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
Max.
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
L
L1
L2
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64
0.89
2.54
1.02
1.27
2.92
0.090 BSC
0.180 BSC
0.370
0.020
0.025
0.035
0.100
0.410
0.040
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Fig. 1. Output Characteristics
@ 25
º
C
1.4
V
GS
= 10V
1.2
1
8V
7V
2.2
2
1.8
1.6
V
GS
= 10V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
12
14
16
6V
I
D
- Amperes
1.4
1.2
1
0.8
0.6
0.4
7V
6V
5V
0.2
0
0
3
6
9
12
15
18
5V
21
24
27
30
V
D S
- Volts
Fig. 3. Output Characteristics
@ 125
º
C
1.4
V
GS
= 10V
1.2
1
8V
7V
3.00
2.75
V
GS
= 10V
V
D S
- Volts
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
R
D S ( o n )
- Normalized
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
I
D
= 0.7A
I
D
= 1.4A
I
D
- Amperes
0.8
0.6
0.4
0.2
0
0
5
10
15
6V
5V
20
25
30
-50
-25
0
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to
2.6
2.4
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
1.6
1.4
T
J
= 125
º
C
1.2
0.5 I
D25
Value vs. I
D
V
GS
= 10V
R
D S ( o n )
- Normalized
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
0.2 0.4
0.6 0.8
1
1.2
I
D
- Amperes
T
J
= 25
º
C
1.4 1.6
1.8
2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
© 2006 IXYS All rights reserved
T
C
- Degrees Centigrade
IXTP 1R4N60P IXTU 1R4N60P
IXTY 1R4N60P
Fig. 7. Input Adm ittance
1.8
1.6
1.4
2
1.8
1.6
Fig. 8. Transconductance
T
J
= -40
º
C
25
º
C
125
º
C
g
f s
- Siemens
5.5
6
6.5
7
I
D
- Amperes
1.2
1
0.8
0.6
0.4
0.2
0
4
4.5
5
T
J
=125
º
C
25
º
C
-40
º
C
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V
G S
- Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
4.5
4
3.5
10
9
8
7
V
DS
= 300V
I
D
= 0.7A
I
G
= 10mA
I
D
- Amperes
Fig. 10. Gate Charge
I
S
- Amperes
3
V
G S
- Volts
T
J
= 25
º
C
2.5
2
1.5
1
0.5
0
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 125
º
C
6
5
4
3
2
1
0
0
1
2
3
4
5
V
S D
- Volts
Fig. 11. Capacitance
1000
f = 1MHz
10.0
Q
G
- NanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Capacitance - picoFarads
C iss
100
R
( t h ) J C
-
º
C / W
35
40
C oss
10
C rss
1.0
1
0
5
10
15
20
25
30
0.1
0.00001
0.0001
0.001
0.01
0.1
1
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
京公网安备 11010802033920号
EEWORLD
