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MB1S

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size190KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BRIDGE RECTIFIER DIODE

MB1S Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIERS
MB1S - MB10S
MB-S
Surface Mount Package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ºC Ambient temperature unless specified otherwise. Single phase, half wave, 60Hz
resistive or inductive load. For capacitive load, derate current by 20%
DESCRIPTION
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
o
T
a
=40 C
Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on
rated load
Maximum Forward Voltage at I
F
=0.4A
Maximum DC Reverse Current T
a
=25 C
at Rated DC Blocking Voltage T
a
=125
o
C
Typical Junction Capacitance
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
o
SYMBOL MB1S MB2S MB4S MB6S MB8S MB10S
V
RRM
100
200
400 600
800
1000
V
RMS
V
DC
*I
(AV)
70
100
140
200
280
400
420
600
0.8
560
800
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
**C
J
R
th (j-a)
T
j
T
stg
30
1.1
5.0
500
15
75
- 55 to +150
- 55 to +150
A
V
µA
µA
pF
ºC/W
ºC
ºC
*Mounted on P.C. board
**Measured at 1MHz and applied reverse voltage of 4.0 V
MB1S_10SRev060106E
Continental Device India Limited
Data Sheet
Page 1 of 3

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state ACTIVE ACTIVE ACTIVE TRANSFERRED DISCONTINUED
Diode type BRIDGE RECTIFIER DIODE bridge rectifier diode BRIDGE RECTIFIER DIODE bridge rectifier diode bridge rectifier diode
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